UNR121L Search Results

UNR121L

Abstract: XP0121L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121L Unit: mm (0.425) Silicon NPN epitaxial planar type 0.20±0.05 5 0.12+0.05 –0.02 4 1 1.3±0.1 2.0±0.1 • UNR121L x 2 • Absolute Maximum Ratings Ta = 25°C Parameter

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UNR1218

Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and

UN121L

Abstract: UNR121L XN0421L XN421L
Contextual Info: Composite Transistors XN0421L XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

UNR121L

Abstract: XP0121L
Contextual Info: Composite Transistors XP0121L Unit: mm 0.425 Silicon NPN epitaxial planar type 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ 0.2±0.1 1.25±0.10 2.1±0.1 For digital circuits • Features 1 1.3±0.1 2.0±0.1 10˚ 0.9±0.1 ■ Basic Part Number ■ Absolute Maximum Ratings Ta = 25°C

121f

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and

UN111L

Abstract: UN121L UNR111L UNR121L XN0431L XN431L
Contextual Info: Composite Transistors XN0431L XN431L Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 5˚ 0.4±0.2 2.8+0.2 –0.3 6 1 (0.65) ● Two elements incorporated into one package. (Transistors with built-in resistor)

Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UN111L

Abstract: UN121L UNR111L UNR121L XN0431L XN431L
Contextual Info: Composite Transistors XN0431L XN431L Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Unit 50 V Collector to emitter voltage VCEO

UNR121L

Abstract: XP0121L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121L Unit: mm (0.425) Silicon NPN epitaxial planar type 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ 0.2±0.1 1.25±0.10 2.1±0.1 For digital circuits • Features 1 Th an W is k y

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121L Unit: mm (0.425) Silicon NPN epitaxial planar type 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ 0.2±0.1 1.25±0.10 2.1±0.1 For digital circuits • Features 3 2 M Di ain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121L Unit: mm (0.425) Silicon NPN epitaxial planar type 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ 0.2±0.1 1.25±0.10 2.1±0.1 For digital circuits • Features 1 1.3±0.1 2.0±0.1

UNR121L

Abstract: XP0121L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121L Unit: mm (0.425) Silicon NPN epitaxial planar type 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ 0.2±0.1 1.25±0.10 2.1±0.1 For digital circuits • Features 1 1.3±0.1 2.0±0.1

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ

XN0421L

Abstract: XN421L UN121L UNR121L
Contextual Info: Composite Transistors XN0421L XN421L Silicon NPN epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25