UN121L
Abstract: UNR121L XN0421L XN421L
Contextual Info: Composite Transistors XN0421L XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current
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xn0421lxn421lun121lunr121l |
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UNR1210
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ
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unr121xun121xun1210un1211+16un1212un1213un1214un1215un1216un1217unr1210unr1211unr1212unr1213unr1214unr1215unr1216unr1217unr1218unr1219
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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UN111L
Abstract: UN121L UNR111L UNR121L XN0431L XN431L
Contextual Info: Composite Transistors XN0431L XN431L Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 5˚ 0.4±0.2 2.8+0.2 –0.3 6 1 (0.65) ● Two elements incorporated into one package. (Transistors with built-in resistor)
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xn0431lxn431lunr121lun121l+2unr111lun111l
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SC59A
Abstract: SC-59A RT1N441C RT1P441M RT1N434S RT1P441C RT1P441S UN111E UN111H UN112X
Contextual Info: - 336 - Ta=25t , *Ef][iTc=25‘ C) m z tt ICvDC) « (V) RT1P434S RT1P441C =m =M RT1P441M HS RTÌP441S H S UN111D UN211H ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ st ♦ST ♦ST ♦ST ♦ST ♦ST UN 2 i1L ft; UN211M UN111E U N I I IF
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rt1p134srt1p441ct1p441mrt1p441s+12n111dun111esc-59aun212y47k/10kun211dsc59art1n441crt1p441mrt1n434sun111hun112x
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Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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unr121xun121xunr1210unr1211+2unr1212unr1213
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UN111L
Abstract: UN121L UNR111L UNR121L XN0431L XN431L
Contextual Info: Composite Transistors XN0431L XN431L Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Unit 50 V Collector to emitter voltage VCEO
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xn0431lxn431lun111lun121l+2unr111lunr121l
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UN111L
Abstract: UN121L XN431L
Contextual Info: Composite Transistors XN431L Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Ratings Unit VCBO 50 V Collector to emitter voltage VCEO 50 V
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xn431lun111lun121l |
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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un1000600mwun2000200mw+13n2111un2112un2113un2114un2115un2116un7000un8000un9110unr921cjun1219un4115un1211
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UN1212
Abstract: UN1219 UN1210 UN1211 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 1.25±0.05 0.45±0.05 • Resistance by Part Number
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121d/121e/121f/121k/121lun1211un1212un1213+7un1214un1215un1216un1217un1218un1219un1210
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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equivalent transistor n 4212
Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Contextual Info: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )
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un1000600mwun1111un1112+14un1113un1114un1115un1116un1117un1118equivalent transistor n 4212n 4212n4212n111fn621dun4115un1211un4211 equivalent
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UN121L
Abstract: XN421L
Contextual Info: Composite Transistors XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating Collector to emitter voltage of element Collector current Ta=25˚C Symbol Ratings Unit VCBO
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xn421lun121l |
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UNR1210
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ
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unr121xun121xun1210un1211+16un1212un1213un1214un1215un1216un1217unr1210unr1211unr1212unr1213unr1214unr1215unr1216unr1217unr1218unr1219
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