UN1122
Abstract: UN1222 UNR1122 UNR1222 XN04322 XN4322
Contextual Info: Composite Transistors XN04322 XN4322 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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xn04322xn4322unr1222un1222+2unr1122un1122
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UN1122
Abstract: UN1222 UNR1122 UNR1222 XN04322 XN4322
Contextual Info: Composite Transistors XN04322 XN4322 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
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xn04322xn4322unr1222un1222+2unr1122un1122
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UN1222
Abstract: UN1122 XN4322 tr231
Contextual Info: Composite Transistors XN4322 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 (Ta=25˚C) Symbol Ratings Unit VCBO 50 V Collector to emitter voltage VCEO
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xn4322un1222un1122tr11000+1tr231
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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un1000600mwun2000200mw+13n2111un2112un2113un2114un2115un2116un7000un8000un9110unr921cjun1219un4115un1211
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UN1219
Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
Contextual Info: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10
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un921eun921fun921kun921l+10un1110un1111un121310k/47kuni114un1214un121912z2un1113un1115
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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1223 digital transistor
Abstract: UN1222 UN1223 UN1221 UN1224
Contextual Info: Transistors with built-in Resistor UN1221/1222/1223/1224 Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 1.5 ● ● ● R2 2.2kΩ 4.7kΩ 10kΩ 10kΩ • Absolute Maximum Ratings 3 Symbol Ratings Unit VCBO 50 V Collector to emitter voltage
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un1221/1222/1223/1224un1221un1222un1223+2un12241223 digital transistor
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