TRANSISTOR W 431 Search Results

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

transistor tt 2222

Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
Contextual Info: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Philips film capacitors 27 pf

Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Contextual Info: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

43120203664

Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
Contextual Info: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear

IC SEM 2105

Abstract: common emitter transistors
Contextual Info: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Contextual Info: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli­ cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and

transistor c 1974

Contextual Info: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.

transistor tt 2222

Abstract: philips resistor 2322-153 TT 2222 BLF177 TRIMMER cap no-2222 809 07015 71005 philips resistor 2322
Contextual Info: Philips Components blr77 _ A _ DEVELOPMENT DATA This data s h e e t co n ta in s advance in fo rm a tio n and sp e c ific a tio n s w h ic h are s u b je c t to change w ith o u t n o tic e . RF POWER MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor intended fo r use in professional transmitters

NTE74LS138

Abstract: NTE74HCT138 NTE74HC138 NTE74132 NTE74HC139 NTE74HC132 NTE74141 NTE74136 NTE74147 NTE74128
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74126, 14-Lead DIP, See Diag. 247 NTE74HC126, NTE74LS126A Quad Bus Buffer w/3-State Outputs NTE74128 14-Lead DIP, See Diag. 247 Quad 2—Input NOR 50Í2 Line Driver 1Y ^ ^ Q v cc B 4Y 1A n 1B H Q v cc

Contextual Info: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is

2-7D101A

Abstract: 2SA1431
Contextual Info: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 100-320(VCe = -2 V , IC= -0.5A)

BLW90

Abstract: fi37
Contextual Info: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

Contextual Info: N AMER PHILIPS/DISCRETE b^E » • bbS3^31 DQ2T4fl2 fiTb * A P X BLW 89 U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

Contextual Info: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

transistor cq 529

Abstract: BLV94 sot-171 transistor zx series
Contextual Info: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.

BUZ41A

Contextual Info: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: 2SD1767 / T ransistors c n i 7 6 7 y '; ^ > h 7 > y ^ 4 , ^ ;tHll,i ffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor npn Pc = 2 W T & -S 40X 4 0 X 0 .7 m m -b 7 5 2 isiMEE, 7 • T tiiG S /D im e n s io n s (U n it: mm) so- yi v; V Ui ~r

25C945

Abstract: 2SC1815 NJM2252 NJM2252L TP10
Contextual Info: ON SCREEN DISPLAY MIX 1C NJM2252 N JM 2252 is the IC th a t h as been developed for VCR ap p licatio n , w hich has the super-im pose function as well as the function to drive the S-VH S, S-o u tp u t p in by pu ttin g the external transistor. N JM 2252 h a s Y signal p in a n d C signal pin o f each in d ep en d en t circuit in it. Y singal line is selectable o f 4 inputs, a n d C

ht 25 transistor

Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery