TRANSISTOR W 431 Search Results

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

TFK u 116

Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW

transistor tt 2222

Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
Contextual Info: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

MRF325

Abstract: BH rn transistor
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON

BLV97

Abstract: D-10 ferroxcube wideband hf choke
Contextual Info: N AMER PH I L I P S / D I S C R E T E - " • w vu ObE D w I ■ w b t,S3 T 3 1 D1 3 L 2 fi •9 N O R T H / A M P E R E X / D I S C R ETE DLE D BLV97 'TZ33~J U.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base

Philips film capacitors 27 pf

Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Contextual Info: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

Contextual Info: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

BLY92C

Abstract: mfc capacitor philips
Contextual Info: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­

blw86

Abstract: ferroxcube wideband hf choke BY206
Contextual Info: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

typ71

Abstract: 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE bSE D WË bbSSTSl □□21714 TTfl • APX BLY91C A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

43120203664

Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
Contextual Info: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear

4312 020 36640

Abstract: ferroxcube wideband hf choke
Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

IC SEM 2105

Abstract: common emitter transistors
Contextual Info: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Contextual Info: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli­ cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested

SOT122A

Abstract: 7Z78437
Contextual Info: hSE 711DÖ2L □Qb3571 ÖSS BiPHIN T> PHILIPS BLY87C/01 IN TER NA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilita ry transmitters w ith a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to

BLV21

Abstract: transistor L6 Sss-5 2222 123 capacitor philips B20-4
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 7110fl2b 0GbSfl3ñ 3ÔT « P H I N BLV21 Jl V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cfass-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaran­

HF 331 transistor

Contextual Info: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

carbon resistors

Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear

transistor d 1991 ar

Abstract: BLY87 BLY87C
Contextual Info: b lE N AMER PHILIPS/DISCRETE ^53^31 D GOSTb? 4 S'il • APX BLY87C/01 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is guaranteed to

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is