TRANSISTOR TZ Search Results

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

transistor b 595

Abstract: ATC100A PH1819-45
Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System

lj11

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very

transistor c36

Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

Contextual Info: N AMER PHILIPS/DISCRETE DbE D • PowerMOS transistor ODlHbflT 4 ■ BUZ83A T-Z°l-1 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB TYP. f= 1.0 GHz PACKAGE DIMENSIONS Units: mm ABSOLUTE MAXIMUM RATINGS T a = 25 °C Collector to Base Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

transistor BFR91

Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
Contextual Info: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

Contextual Info: J_L N AMER PHILIPS/DISCRETE MAINTENANCE TYPE OLE D b b 5 3 ^ 3 i o o m c]Ec] i L for new design use LBE/LCE2009S LBE2008T LCE2008T T-ZZ-OS MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

THC-4413

Abstract: sj 2907 4148 diode diode st 4148 TRANSISTOR 4148 THC-2894 THC-5818 THC-2369 THC-2369A THC-2945
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 1 0 0 % Probed Parameters TYPE D E S C R IP T IO N BVoo M in . Ic V o lts @ (mA) B V cto M in . Ic V o lts @ (mA) M jn. V o lts B V ebo *5 0 1 50 @ Ic

2SK798

Abstract: M27555
Contextual Info: 98D „ c r F I E C T R O N IC S 18945 IN C N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^fl sgggì - D E | m 2 7 S 2 5 GDlflci4S 3 l'es 2 DESCRIPTION The 2SK798 is N-Channel MOS Field Effect Power Transistor K 7 9 8 PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.

ESD Considerations for SOI Switch Design

Contextual Info: ESD Considerations for SOI Switch Design Yuh-Yue Chen, Tzung-Yin Lee, Ed Lawrence, and Jeffrey Woods Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Email: yuhyue.chen@skyworksinc.com, Tel: 949 231-3083 This paper proposes a solution that employs transistor

2SK1356

Contextual Info: 2SK1356 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tzt-MOS INDUSTRIAL APPLICATIONS Unie in m m HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. £ 10.3UAJC. FEATURES: . High Breakdown Voltage : V( j r )d SS“900V

Contextual Info: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)

transistor et 454

Abstract: B686 2SD774 pt 4115 T1IU 2SB734 K0559
Contextual Info: Silicon Transistor 2SD774 N PN i + 9 IJ =1 V h NPN Silicon Epitaxial Transistor Audio Frequency Power Am plifier * M S /P A C K A G E DIMENSIONS Unit •mm 0 2SB734 t ^ > 7"U > > ? ') T l i f f l t i i t . < . S B tE T 'to P t = 1.0 W, V ceo = 50 V * & * * * * £ * & /A B S O L U T E M A XIM U M RATINGS {Ta = 25 X )

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

MARKING A8 SOT-23-6

Abstract: 218tk
Contextual Info: rSTOKO TK70003 SINGLE OUTPUT, TWO INPUT SOLID STATE SWITCH FEATURES APPLICATIONS • Internal PNP Power Transistor ■ Reverse Bias Voltage Protection ■ Battery Powered System ■ Radio Control Systems ■ Very Low Input-Output Voltage Difference ■ Automatic Test Equipment ATE

BRC144

Abstract: BRA144ETP BRC114ETP BRC123ETP BRC124ETP BRC143ETP BRC144ETP DSA003640 BRC114
Contextual Info: BRC144ETP Series NPN Built-in Resistor Transistor TO–92 Series Inverter, Driver, Switching ADE-208-1447B Z Rev.2 Sep. 2001 Features • Built–in Resistor Type • Simplifies Circuit Design • Reduces Board Space • Complementary pair with BRA144ETP series

9829 A

Abstract: TARF2202 .7E8
Contextual Info: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

atk63

Abstract: 4N28 4n26 example circuit 4N26 4N25 applications optocoupler 4N25
Contextual Info: 4N25/ 4N26/ 4N27/ 4N28 VISHAY Vishay Telefun ken Y Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline