TRANSISTOR TZ Search Results

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA501U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE.

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

Contextual Info: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to

transistor marking 2A H

Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.

Contextual Info: FZ 500 R 12 KF Therm ische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties H ö c h s tz u lä s s iq e W e rte VcES M axim u m rated va lu e s 1200 V 500 A Therm al properties R thjc DC, pro B a u ste in / p e r m od u le

transistor b 595

Abstract: ATC100A PH1819-45
Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System

lj11

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very

transistor c36

Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

EM7164SU16

Contextual Info: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

EM7164SU16

Abstract: EM7164SU16W DIE 8INCH T&R
Contextual Info: Preliminary EM7164SU16W Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jun. 07 , 2005 Preliminary 0.1 2’nd Draft Add net die and pad coordinates

25r06

Contextual Info: FF 25 R 06 KF 2 Therm ische Eigenschaften Transistor Transistor R thjc Elektrische Eigenschaften Electrical properties RthCK H ö ch s tz u lä s s ige W e rte V ces M axim u m rated va lu e s 600 V 25 A lc Thermal properties °C /W 0,5 DC, p ro B a u ste in / p e r m od u le

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

Contextual Info: KS324520 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S iflQ lB D s r lin Q t O H Transistor Module 200 Amperes/600 Volts O U T LIN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB TYP. f= 1.0 GHz PACKAGE DIMENSIONS Units: mm ABSOLUTE MAXIMUM RATINGS T a = 25 °C Collector to Base Voltage

Contextual Info: <^s.mL-Conaactoi ^P L/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFS23A JL VHF. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MRB11350Y

Contextual Info: J _ - N AMER PH ILIP S/D ISCRETE ObE D • ■ ■ I l _ —- bbSBTBl OD1SDSS 1 ■ MRB11350Y Â _ r-22-le PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended fo r use in m ilitary and professional applications. It operates

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

tca150c

Abstract: 1j99 SOLITRON
Contextual Info: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications

transistor BFR91

Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
Contextual Info: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial

D 1398 Transistor

Abstract: d 1398 BLV98 32Q1 ci 1404
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.