TRANSISTOR TO6 Search Results

NTE124

Abstract: 325V
Contextual Info: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

"PNP Transistor"

Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
Contextual Info: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

TO63 package

Abstract: NTE71
Contextual Info: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.

2N5664

Abstract: 2N5664J 2N5664JV 2N5664JX
Contextual Info: 2N5664 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose high power switching • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5664J

NTE369

Abstract: Transistor 800V
Contextual Info: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA

2N5661

Abstract: 2N5661J 2N5661JV 2N5661JX
Contextual Info: 2N5661 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5661J • JANTX level (2N5661JX)

NPN 200 VOLTS POWER TRANSISTOR

Abstract: D-333 Semicoa Semiconductor 2N5660 2N5660J 2N5660JV 2N5660JX
Contextual Info: 2N5660 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5660J • JANTX level (2N5660JX)

to63

Abstract: NTE70 180v 250w
Contextual Info: NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.

transistor case To 105

Abstract: transistor case To 106 transistor sockets a 124 transistor TO-66 SOCKET TRANSISTOR 187 4634 839 transistor ASTM-D4066 TO-62
Contextual Info: 25 Transistor Sockets TO-3 Power Transistor Sockets TO-3 Transistor Sockets 1.530 1.187 .665 1.600 Max. 1.187 .665 .450 6-32 Thread 2 Pls (2) Insulating Shoulders .035 Tab 'B' Tab 'A' Heavy Duty Features an all-in-one mounting plate and solder tabs, providing complete electrical isolation of the solder tab

2N3441

Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Driver for High Power Outputs Series and Shunt Regulators

2N3441

Contextual Info: NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Boca Semiconductor Corp. BSC http ://www.bocasemi.com Driver for High Power Outputs

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N6301

Abstract: ams 2411
Contextual Info: 2N6301 80 V - Darlington Complementary NPN Silicon Power Transistor 19.29 Transist. Page 1 of 2 Enter Your Part # Home Part Number: 2N6301 Online Store 2N6301 Diodes 80 V - Darlington Complementary NPN Silicon Power Transistors Transistor Integrated Circuits

Contextual Info: 2N6316 80 V complementary NPN silicon power transistor 20.00 Transistors Transistors . Page 1 of 2 Enter Your Part # Home Part Number: 2N6316 Online Store 2N6316 Diodes 80 V complementary NPN silicon power transistor Transistors Integrated Circuits Optoelectronics

2n6318

Contextual Info: 2N6318 80 V complementary PNP silicon power transistor 8.50 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6318 Online Store 2N6318 Diodes 80 V complementary PNP silicon power transistor Transistors Integrated Circuits Optoelectronics

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

60N60

Abstract: 2N6300
Contextual Info: 2N6300 60 V darlington complementary NPN silicon power transistor 9.00 Transistors D. Page 1 of 2 Enter Your Part # Home Part Number: 2N6300 Online Store 2N6300 Diodes 60 Transistors V darlington complementary NPN silicon transistor Integrated Circuits Optoelectronics

2N 326 Transistor

Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
Contextual Info: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

1061 transistor

Abstract: c 111 transistor NPN Transistor isolated
Contextual Info: TABLE OF CONTENTS Poge Power Transistor Technology . 2 Type/Rage Locato r.

Contextual Info: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA

TRANSFORMER 220v to 9V

Abstract: 220v 2a diode bridge NTE384 220v 20v 4a
Contextual Info: NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.

Contextual Info: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV

Contextual Info: cb y com pany Features A low cost, high quality rugged transistor socket designed for use where trouble free life is required. The combination onepiece mounting and collector allows for direct mounting of the transistor and is also effective in dissipating heat. Contacts