325V Search Results

SLR-325

Abstract: SLR-325DC SLR-325DU SLR-325MC SLR-325MG SLR-325VC SLR-325VR SLR-325YC SLR-325YY
Contextual Info: Data Sheet SLR-325 Series Features ・Viewing angle 2θ 1/2 : 40° ・Lead pitch 5mm Color Type V D Y M Specifications Viewing angle 2θ 1/2 / 40 Part No. : Standard Chip Structure • SLR-325VC ■ SLR-325DC Red GaAsP on GaP ■ SLR-325YC ■ SLR-325MC

5V n mosfet 80ma

Contextual Info: HV430 High Voltage Ring Generator Ordering Information Operating Voltage Package Options VPP1-VNN1 SOW-20 325V HV430WG Features General Description ❏ 105Vrms ring signal ❏ Output over current protection ❏ 5.0V CMOS logic control ❏ Logic enable/disable to save power

NTE255

Contextual Info: NTE255 Silicon NPN Transistor Horizontal Driver, Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V

Contextual Info: J.E.IIS.U i, Line. CX TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUY70B Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEo(sus)= 325V(Min) • Low Collector-Emitter Saturation Voltage: VCE(sat)= 5.0V(Max.)@ lc= 4A

Contextual Info: SLR-325MG Data Sheet SLR-325 Series Features ・Viewing angle 2θ 1/2 : 40° ・Lead pitch 5mm Color Type V D Y M Specifications Viewing angle 2θ 1/2 / 40 Part No. : Standard Chip Structure • SLR-325VC ■ SLR-325DC Red GaAsP on GaP ■ SLR-325YC

Contextual Info: EB6 Vishay Dale Edgeboard Connectors, Dual Readout, 0.125" [3.17mm] C-C, Standard and Right Angle Terminals FEATURES ELECTRICAL SPECIFICATIONS Current Rating: 3 amps. Test Voltage Between Contacts: At sea level: 1500VRMS. At 70,000 feet [21,336 meters]: 325VRMS.

K95 Package

Contextual Info: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • NEW PRODUCT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package

DIODE smd marking CODE WA

Abstract: DFN1006-2
Contextual Info: BAS521LP NEW PRODUCT HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed: Maximum of 50 ns High Reverse Breakdown Voltage: 325V Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature

Contextual Info: YAGEO CORPORATION LEADED RESISTORS Zerohm Resistors ZOR Series SPECIFICATIONS INTRODUCTION Maximum Resistance 0.005: Min. Insulation Resistance Dry Wet 10,000M: 100M: Min. Dielectric Withstanding Voltage Atmospheric Reduced 500V RMS 325V RMS Insulation Flammability

NPN Transistor 1A 400V

Abstract: npn transistors 400V 1A DC DC converter 5v to 400V MJ423 npn transistor 400V transistor Ic 1A datasheet NPN 400V voltage regulator
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ423 DESCRIPTION •High Collector-Emitter Sustaining Voltage: VCEO SUS = 325V(Min.) ·DC Current Gain: hFE= 30-90@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters,

Hitachi DSA00100

Abstract: is 3063 3063 ECN3063 ECN3063SP ECN3063SPR ECN3063SPV hitachi fuel pump vfd-b problems
Contextual Info: ECN3063 4. Electrical Characteristics Ta=25°C Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Items Standby Current Output device FVD Turn On Delay Time Turn Off Delay Time Diode FVD Input Voltage Input Current

HV430

Abstract: HV430WG SOW-20
Contextual Info: HV430 High Voltage Ring Generator Ordering Information Operating Voltage Package Options VPP1-VNN1 SOW-20 325V HV430WG Features General Description ❏ 105Vrms ring signal ❏ Output over current protection ❏ 5.0V CMOS logic control ❏ Logic enable/disable to save power

mu diode

Abstract: Hitachi DSA00100 ECN3064 ECN3064SP ECN3064SPR ECN3064SPV Hitachi motor driver
Contextual Info: ECN3064 4. Electrical Characteristics Ta=25 °C Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. Items 1 Standby Current 2 3 Output device FVD 4 Symbols IS ICC VFT Terminal VS1,VS2 VCC MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV,

CT283

Abstract: CT282 CT284 CT285 CT286 CT287
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON GENERAL PURPOSE DIODE AXIAL LEAD CT282 TO CT287 40V to 325V, 0.2A 500mW DO- 35 Glass Axial Package FEATURES General lPurpose , Industrial, Military And Space Application , Hermetically Sealed Glass With A Stud On

Contextual Info: SLR-325VR Data Sheet SLR-325 Series Features ・Viewing angle 2θ 1/2 : 40° ・Lead pitch 5mm Color Type V D Y M Specifications Viewing angle 2θ 1/2 / 40 Part No. : Standard Chip Structure • SLR-325VC ■ SLR-325DC Red GaAsP on GaP ■ SLR-325YC

Contextual Info: SLR-325YY Data Sheet SLR-325 Series Features ・Viewing angle 2θ 1/2 : 40° ・Lead pitch 5mm Color Type V D Y M Specifications Viewing angle 2θ 1/2 / 40 Part No. : Standard Chip Structure • SLR-325VC ■ SLR-325DC Red GaAsP on GaP ■ SLR-325YC

BUX53

Contextual Info: BUX53 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 325V 0.41 (0.016) 0.53 (0.021)

BAS521LP

Abstract: BAS521LP-7
Contextual Info: BAS521LP HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed: Maximum of 50 ns High Reverse Breakdown Voltage: 325V Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature

Contextual Info: A Subsidiary of SILICON TRANSISTOR CORP. Wideband, Fast-settling Operational Amplifier Features □ Fast Settling Time 250ns to 0.01 %, ±10V step □ High Slew Rate 325V/ns □ 450MHz Gain-Bandwidth Product Description Featuring a full differential input, 450MHz gainbandwidth product, and a

ECN3067SLR

Abstract: WB mark Diode PDE-3067-1 Hitachi DSA00257 hitachi f380 ECN3067 ECN3067SLV 022-CB Hitachi DSA0025
Contextual Info: P3/9 ECN3067 4.Electrical Characteristics Unless otherwise specified, Vcc=15V,VS=325V Suffix T: Top arm B: Bottom Arm Ta = 25°C No. Items 1 Standby Current 2 Symbols Terminal IS VS1,VS2 ISB BU-MU,BV- MIN. - TYP. 15 MAX. 0.25 30 Unit mA mA 10 2.5 20 3.5 mA

VISHAY CONNECTORS

Contextual Info: EB6 Vishay Dale Edgeboard Connectors, Dual Readout, 0.125" [3.17mm] C-C, Standard and Right Angle Terminals FEATURES ELECTRICAL SPECIFICATIONS Current Rating: 3 amps. Test Voltage Between Contacts: At sea level: 1500VRMS. At 70,000 feet [21,336 meters]: 325VRMS.

DC DC converter 50mA 400V

Abstract: npn transistor 400V 400V voltage regulator DC DC converter 5v to 400V 400V 100MA NPN diode 400v 0.5a npn transistors 400V 1A MJ413
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ413 DESCRIPTION •High Collector-Emitter Sustaining Voltage: VCEO SUS = 325V(Min.) ·DC Current Gain: hFE= 20-80@ IC= 0.5A APPLICATIONS ·Designed for medium to high voltage inverters, converters,

HV507

Abstract: DC converter 325V
Contextual Info: Super te x inc. HV507 325V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs Ordering Information_ Package Options Device Recommended Operating Vpp Max 80-Lead Plastic Gullwing Die HV507 325V HV507PG

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON GENERAL PURPOSE DIODE AXIAL LEAD CT282 TO CT287 40V to 325V, 0.2A 500mW DO- 35 Glass Axial Package FEATURES General lPurpose , Industrial, Military And Space Application , Hermetically Sealed Glass With A Stud On