TRANSISTOR TL 431 G Search Results

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

schematic diagram reverse forward motor

Abstract: transpac
Contextual Info: / S O^DMitLKgirMDgi T S G S -T H O M S O N SGS150MA01OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS on SGS150MA010D1 100 V 0.009 Si • • • • • 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL

TRANSISTOR TL 431

Abstract: CMT20N50 CMT20N50N3P
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

D44h7

Abstract: D44H12
Contextual Info: 3875081 G E SOLID _ STATE- DI n 1C 1 QHAf i DE 1 3 ñ 7 S D ñ l □□nDñfe, h i " D44H Series NPN POWER TRANSISTORS 30 -8 0 VOLTS 10 AMP, 50 WATTS >COMPLEMENTARY TO THE D45H SERIES The General Electric D44H is a power transistor designed for various specific and general purpose applications, such as:

S100 transistor

Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

LM7915CK

Abstract: LM7905CK LM7912CK LM79XX lm7905ct LM7908CT LM7905 to3 LM7915CK to3
Contextual Info: LM79XX SflE D • b 5 D 1 1 2 M 007b4fl4 72T M N S C B SHNational mm Semiconductor NATL S E M I C O N D LINEAR T -5 8 -1 1 - (3 LM79XX Series 3-Terminal Negative Regulators General Description The LM79XX series of 3-terminal regulators is available with

BUK452-50A

Abstract: BUK452-50B T0220AB
Contextual Info: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

BUV18

Abstract: transistor buv 90 BUV19 transistor buv BUV18-BUV19
Contextual Info: •_?52T237 QD2Ô>71J? 'T '3 'S - I S SGS -THOMSON S G S-THOMSON BUV18 BUV19 3QE » NPN HIGH CURRENT SWITCHING TRANSISTORS HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE AT 40A FAST TURN-OFF AND TURN-ON DESC RIPTIO N High current, high speed transistors suited for low

BUZ41A

Contextual Info: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

TRANSISTOR bH-16

Abstract: BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

national semiconductor lm334

Contextual Info: SflE D • b5G112M 0074410 Rôt « N S C S J"3ò-Cn LM134/LM234/LM334 NATL SEMICOND LINEAR 03 National m M Semiconductor LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description The LM 134/LM234/LM334 are 3-terminal adjustable cur­ rent sources featuring 10,000:1 range in operating current,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE

D 8243 HC

Abstract: 9243 25CC D24D LH4003 LH4003C LH4003CD LH4003D z351
Contextual Info: LH4003/LH4003C PRELIMINARY ÉSà CT1 National Semiconductor LH4003/LH4003C Precision RF Closed Loop Buffer General Description Features The LH4003 is a precision RF buffer optimized for unity gain applications. The LH4003 features a small signal bandwidth

SMD Transistor 431 ac

Contextual Info: SH National Æm Semiconductor 54AC/74AC14 Hex Inverter with Schmitt Trigger Input General Description The ’AC14 contains six inverter gates each with a Schmitt trigger input. The ’AC14 contains six logic inverters which accept standard CMOS input signals and provide standard

12v transformer

Contextual Info: f f i H a r r is U U S E M I C O N D U C T O R FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

B2431-1

Abstract: 9243
Contextual Info: LH4003/LH4003C National Semiconductor PRELIMINARY LH4003/LH4003C Precision RF Closed Loop Buffer General Description Features The LH4003 is a precision RF buffer optimized for unity gain applications. The LH4003 features a small signal bandwidth of 250 MHz. The buffer is internally compensated to be unity

transistor TL 431 g

Abstract: S 170 MOSFET TRANSISTOR transistor 667 7A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTY20N50E TMOS E-FET ™ Power Field Effect Transistor Motorola Praterrad Devfce N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 20 AMPERES 500 VOLTS RDS<on 3 0-26 OHM This high voltage MOSFET uses an advanced termination

transistor tic 106 N

Abstract: bly power transistor transistor tic 226 transistor SE 431
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C

transistor c 6073

Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Contextual Info: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005

AN569

Abstract: MTW20N50E
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination

LM431C1M3

Abstract: 1115 r1b TL 431 SO8 diode N1E 2SD 2495 Equivalent WV SOT23-3 2B2 zener diode 1B5 zener diode 2SD 2495 TI 81W
Contextual Info: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire tem pera­ ture range of operation. The output voltage may be set at any level greater than 2.5V VREF up to 36V merely by