TRANSPAC Search Results

SGS15DB070D

Abstract: sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E SGS15DB080D sgs15d
Contextual Info: S G S-THONSON 07E D | 7=15=1237 QOlñTSb b 73C 1 8 9 8 5 u TRANSPACK NPN POWER A SG St5 D B 0 7 0 Îl DARLINGTON SGS15DB080D MODULE APPLICATIONS: These products are silicon NPN power dariingtons in half bridge configuration for industrial switching applications with three-phase mains operation.

SGS30DA070D

Abstract: 57558 SGS30DA060D 19002D SGS30DA060 SGS30D
Contextual Info: S G S-THOilSON D7E D I TRANSPACK NPN POWER DARLINGTON 19001 m o dule APPLICATIONS: 7^237 These products are silicon NPN power dariingtons for industrial switching applications with three-phase mains operation. FAST FREEWHEEL DIODE ISOLATED POWER MODULE 30KVA - 375W

Contextual Info: EDGECARD INTRODUCTION AT&T manufactures two styles of cardedge, one-piece, printed-circuit connectors. They were developed to be used with the Transpac hardware used in digital transmission systems. The cardedge connectors mate with precious metal-plated fingers on a

WD2511A

Abstract: SR24S WD2511 DALI gateway RDD 17-33 48-PIN 68-PIN SR16 W2511A "LINK STATE"
Contextual Info: WD2511A X.25 Packet Network Interface LAPB FEATURES Handles The Entire Link Level Com m unication Protocol • International standard CCIT X.25 LAPB protocol for packet switching • Program m able link level tim er (T1) and retransm ission counter (N2)

Contextual Info: WD2511A X.25 Packet Network Interface LAPB FEATURES NO , W CONNECTION REPLYCZ 2 we [ZZ 3 cs CZ 4 re r z 5 CLKCZ 6 MRCZ 7 DALOCZ 8 DAL1 dH 9 DAL2 I 10 DAL3 i 11 DAL4 ( 12 DA15 I 13 DAL6 CH 14 DAL7 CZ 15 RDCZ 16 RCCZ 17 (GND)Vgs I 18 TCC 19 td c z 20 RTS^ 21

BUV98AF

Abstract: TRANSISTOR BUV98AF BUV98AV Scans-007954 SC04B
Contextual Info: 3DE ]> • TTS'ìSB? - D D 3 Q4 Q 5 S G S- TH OM SON SGS-THOMSON — „ — p [MDœmi gTrifMD § I '33-15 1 - BUV98AF BUV98AV NPN TR A N S IS TO R PO W ER MODULE . HIGH CURRENT POWER BIPOLAR MODULE

Contextual Info: Packing Letter Codes used in Orderable Part Number Packing Letter E F H J K M Q R S U V X Y EL EP FL FP HL HP JL JP KL KP ML MP QL QP RL RP SL SP UL UP VL VP XL XP YL YP Z Z Z Z Z Z Z 3NC 551 135 125 118 557 699 127 215 512 112 5 115 518 157 412 113 129 653

mr4040

Abstract: sma e1017 BT 2323 AUDIO CONTROLLER PIN DETAILS ADSP-2199x dc geared motor 60 rmp ADSP-2100 ADSP-21992 summit-ICE ASY 48 VI IC tda 2151
Contextual Info: Preliminary ADSP-2199x Mixed Signal DSP Controller Hardware Reference Preliminary Revision 0, 2003 Part Number: 82-000640-01 Analog Devices, Inc. Digital Signal Processor Division One Technology Way Norwood, Mass. 02062-9106 Preliminary Copyright Information

SGS100MA010D1

Abstract: S100M schematic diagram reverse forward motor
Contextual Info: SGS-THOMSON SG S100M A010D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS ^D S on SGS100MA010D1 100 V 0.014 a • • • • • Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL INDUSTRIAL APPLICATIONS:

SGS100MA010D1

Abstract: SGS100M
Contextual Info: r z T S G S -T H O M S O N ^ 7 # M g(M>i[L[I(g¥[RMO(gS S G S 10 0 M A 0 10 D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS100MA010D1 • • • • • VDss 100 V R DS(on 0.014 fi Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING

schematic diagram reverse forward motor

Abstract: transpac
Contextual Info: / S O^DMitLKgirMDgi T S G S -T H O M S O N SGS150MA01OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS on SGS150MA010D1 100 V 0.009 Si • • • • • 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL

ESM5045DF

Abstract: ESM5045DV D0304
Contextual Info: 30E D • 7 e1S c]237 D G 3 Q 4 bE fl ESM5045DF ESM5045DV SGS-THOMSON lILGiÜir^PMQOS ._ S 6 S-THOMSON 'T ^ '3 - 3 ^ NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE

BVW10

Abstract: ESM4045AF ESM4045
Contextual Info: 3GE D • T'IE'ìaa? DD3GMSD 1 ■ SGS-THOMSON iLItglFIHWÜ_ ESM4045AF ESM4045AV ~ ^ ~ G ~ S ^ T H 0 M S 0 N NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS

TRANSISTOR c 547 B

Contextual Info: 30E D • 7^21237 00307Mb 0 ■ s g s -t h o m s o n [« ^ m itg T F G M flO S ^ 7# s G s“ thomson IR F K 6 H 150 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE IR F K 6 H 1 5 0 V dss RDS on Id 100 V 0 .0 1 0 a

TSD4M450V

Abstract: tsd4m450 TSD4M450F
Contextual Info: 3PE c ï s g » • 7^5*1537 Q D3 Q5 74 SGS-THOMSON id O T * ! ï N TYPE V dss RDS on lo 500 V 0.1 £2 45 A ■ . ■ ■ TSD4M450F TSD4M450V _ CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON TSD4M450F/V ■ ■ ■ ■ ÔJB HIGH CURRENT POWER MOS MODULE

S-40T

Abstract: SGS40TA045 SGS40
Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

STF6045DV

Abstract: BD405 transistor b 1185 BD 149 transistor
Contextual Info: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

TSD4M451V

Abstract: fj25
Contextual Info: 3DE » • TESTES? 0030560 3 ■ 15 S G S -T H O M S O N TSD 4M451F ilL i * ! TSD 4 M451V s g s-thomson n - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TYPE V dss TSD4M451F/V 450 V ■ . . . . . . . RDS on 0.1 n Id 45 A HIGH CURRENT POWER MOS MODULE

SGS250DA013D

Abstract: SGS250DA sgs250D
Contextual Info: 3DE D Mi T^Sa? QQ30 b ci5 3 • £ ÿ j SCS-THOMSON 0œ iIUI^IïMD ^ ''T * 3 '5 » 3 5 " SGS250D A013D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

SGS100MA010D1

Contextual Info: . 3DE » • 7 Ej g ci S 3 7 005^03 S G S -T H O M S O N ^ A T#n, M ^© H [Li gTO i3n(gi s - m i ^ i r S G S 1 OOMAQ1OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V dss SGS100MA010D1 100 V • • • • • ^DSfon 0.014 G 120 A ISOLATED POWERMOS MODULE

AS3900

Abstract: 27mhz IC USB AS39XX visible communication LED AS3900 DEMOBOARD brightness sensor
Contextual Info: AS3900 - Demo Board Manual 27MHz Low Power FSK Transceiver AS3900 Demo Board Manual AS3900 27MHz Low Power FSK Transceiver www.austriamicrosystems.com www.austriamicrosystems.com Revision 1.00 1-8 AS3900 - Demo Board Manual 27MHz Low Power FSK Transceiver

TSG25N100DV

Abstract: TSG25N100DF ISG25 3641b
Contextual Info: 30E D S G S -T H O M [* [F 3 m m 7 cj a c}237 QQ3QS24 M • S O N T IS G 2 5 N 1 0 0 D F [IO T 2 [* S T S G 2 5 N 1 O O D V ISOLATED GATE BIPOLAR TRANSISTOR (IGBT) _ ISOTOP POWER MODULE S G S-THOMSON ■ ■ . . . VOLTAGE-CONTROLLED GATE LOW ON-VOLTAGE DROP VcE(sat)

TSD5MG40V

Abstract: STHV102 TSD5MG40F sthv QG30S
Contextual Info: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE