SGS40 Search Results

BUV48 SE

Abstract: SGSD00036 kkz 10
Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous

S-40T

Abstract: SGS40TA045 SGS40
Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

kkz 10

Abstract: BUV48
Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO­ WER MOS will, in many applications, gradually re­ place power bipolar devices due to the numerous

SGS40TA045

Contextual Info: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING

Contextual Info: O K I Semiconductor M S C 2 3 1 0 8 C /C L -X X P S 2 1,048,576-Word x 8-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23108C/CL-xxDS2 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs 1M x 4 in SOJ packages