TRANSISTOR TD7 Search Results

capacitor 104 PF disc

Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Contextual Info: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

MSA035

Abstract: BFQ246 MSB002
Contextual Info: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.

BUK543

Abstract: BUK543-100A BUK543-100B
Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

NEC JAPAN 237 521 02

Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART

TEA2019

Abstract: NTCC TEA2018A ic 810 pin diagram
Contextual Info: SGS-THOMSON TEA2019 I CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­

2SK1294

Abstract: NEC 41-A 002 TD-7594 2SK1294 NEC MEI-1202 TEA-1035
Contextual Info: NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1294 is N-channel M O S Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed fo r solenoid, m otor and lam p driver.

Contextual Info: bb53T31 DD25bS3 ITfl H A P X N AMER PHILIPS/DISCRETE BST84 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter­ rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.

BST84

Abstract: z940 w200V
Contextual Info: • N bbSBTBl AMER DDESb53 ITß *APX PHILIPS/DISCRETE b?E BST84 T> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter­ rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.

tsl-3

Abstract: TD6380 TD7614F 28X4
Contextual Info: TO SH IBA _ TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D7614 F 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor.

Contextual Info: TD7614F T O SH IB A TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T n 7 fi 1 A F • Krtr’ ■ m ■ ■ 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor.

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

2sc2899 transistor

Abstract: 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 2SD781
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

3 terminal 4mhz crystal oscillator

Abstract: TD7614F comparator 12v 10bit TD6380 28x4
Contextual Info: TO S H IB A TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D 7 61 4 F 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor. • Built-in tuning amp (high withstanding voltage of 35V).

comparator 12v 10bit

Abstract: TD6380 TD7614F td7614 th crystal oscillator
Contextual Info: TO S H IBA TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D 7 61 4 F 3-W IRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor. • Built-in tuning amp (high withstanding voltage of 35V).

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

MX0912B250Y

Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

m54517p

Abstract: M54517 3e tRANSISTOR mitsubishi 7 pin 5v relay NO DARLINGTON SINK DRIVER
Contextual Info: fciBE • b 2 4 =]fl5 7 M IT S U B IS H I □ D m 'ìb 'ì D GT L In I T 3 TD7 MI T SU BI SH I BIPOLAR DIGITAL ICs M 54517P LO G IC 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54517P, 7-channel sink driver, consists of 14 NPN tran­ PIN CONFIGURATION (TOP VIEW)

NEC 41-A 002

Abstract: 2SK1294 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET

nec 2501

Abstract: TEA-1035 2SK1294 MEI-1202 nec 2702
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SC3544

Abstract: IC sn 74 ls 2000
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry

LINEAR/615/OS/LM01A/TC55417P/hexfet power mosfets international rectifier

Contextual Info: International S Rectifier Provisional Data Sheet No. PD-9.1401 REPETITIVE AVALANCHE AND dv/dt RATED IRHY9230CM JANSR2N7383 HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD -200 Volt, 0.8G, RAD HARD HEXFET Product Summary International Rectifier's P-Channel RAD HARD technology

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TO SH IBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T D 76 14 F DATA SILICON MONOLITHIC 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system softw are-com patible w ith TD6380 series . • Built-in 4-band switch transistor.