TRANSISTOR SOT23 G1 Search Results

BFS20

Contextual Info: SOT23 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 3 – JANUARY 1996 BFS20 ✪ PARTMARKING DETAIL — G1 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO

Contextual Info: SOT23 NPN SILICON PLANAR VHF TRANSISTOR BFS20 ISSUE 3 -.JANUARY 1996_ & PARTMARKING DETAIL — G1 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARA M ETER S YM B O L VALUE UNIT Collector-Base Voltage V CBO 30 V V CEO 20 V V EBO 4 V ¡CM 25 mA Collector-Em itter Voltage

marking 1GL

Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

BF747

Abstract: MBB400 sot23-4 marking a1
Contextual Info: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.

bf547 philips

Abstract: BF547 B12 IC marking code marking code 604 SOT23
Contextual Info: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation

Contextual Info: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA

BSN3005

Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005 FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g DESCRIPTION gate s source

Contextual Info: A Product Line of Diodes Incorporated APT17 480V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 480V   BVCES > 700V   BVEBO > 10V Case: TO92 or SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0

Contextual Info: SOT23 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 3 -JANUARY 1996_2 _ P A R T M A R K IN G D ET A IL — G1 ABSOLUTE MAXIM UM RATINGS. PARAMETER SYM BO L VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V V EBO 4 V 25

AN-450

Abstract: C1996 D06A LM3460 MA05A SHUNT REGULATOR marking "7A"
Contextual Info: LM3460-1 2 -1 5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination This controller is available in a tiny SOT23-5 package and includes an internally compensated op amp a bandgap reference an NPN output transistor and voltage setting resistors

sm 4109

Abstract: transistor G1 SOT-23 AT-30511 AT-42010 SOT-143 g1 AT-41486 AT-30533 AT-31011 AT-32011 AT-32033
Contextual Info: Low Noise Transistors Typical Specifications @ 25°C Case Temperature Part Number AT-30511 Frequency (GHz) VCE (V) NFo (dB) Ga (dB) P1 dB (dBm) 0.9 2.7 1.1 16.0 +7.0 G1 dB |S21E|2 @ 1.0 GHz (dBm) (dB) Package Page No. 16.5 17.9 [1] SOT-143 plastic SM 4-23

sm 4109

Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

Bipolar Transistors Selection Guide

Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

AT-41435

Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
Contextual Info: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

marking G1 sot-23

Abstract: MMBT5401 MMBT5551 MARKING G1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1

transistor sot23 g1

Abstract: Advanced Analog Circuits sot transistor 13000 APT17NTR 6650 SOT23 g1 sot 23 npn transistor 13000 npn transistor
Contextual Info: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for

transistor G1 SOT-23

Abstract: 1203 TO-92 625 SOT-23 8F sot23 NPN Transistor TO92
Contextual Info: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for

DI 380 Transistor

Abstract: 355 sot-23 100-6 SOT-23 APT17NTR
Contextual Info: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V · High Voltage and Low Standby Power Circuit for

BCD Semiconductor

Abstract: transistor 2808 voltage to bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for

transistor 2808

Abstract: sot23 transistor marking ZH ZH SOT-23 2808 transistor marking SH SOT23 transistor 4400 100-6 SOT-23 13000 npn transistor marking SH sot-23 APT17NTR
Contextual Info: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for

mark G1 SOT-23

Abstract: 2N5551 g1 2N5551 KST5551
Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TRANSISTOR SMD MARKING g1

Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers