TRANSISTOR SL 100 DATA SHEET Search Results

MDA380

Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

122d transistor

Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile

SL 100 NPN Transistor base emitter collector

Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz

BLV91

Abstract: ferroxcube 1988 mda406 MDA401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in

BLV101A

Abstract: BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Line-ups INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas.

transistor sd 965

Abstract: 2n3996 equivalent transistor T1 SL 100 NPN Transistor 2N3996 equivalent of SL 100 NPN Transistor TRANSISTOR SL 100 2N3997 2N3998 2N3999 190-32 UNF-2a
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR

2n3996 equivalent transistor

Abstract: transistor sd 965
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR

BLW95

Abstract: TV power transistor datasheet BFQ68 Applications microwave rf transmitter RF Power Modules BLW50F blv862 bfg91a data sheet for BLF147 blf278 rf power
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF & Microwave Power Transistors and RF Power Modules File under Discrete Semiconductors, SC19 1998 Feb 05 Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Line-ups SSB TRANSMITTERS 1.5 to 30 MHz

s3331

Contextual Info: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching

Contextual Info: i T T DEVELOPMENT DATA • This data sheet contains advance information and specifications are subject to change without notice. ^ 53=131 o o i? 5 fli ^ ■ ’ BST90 Jt N AMER PHILIPS/DISCRETET S5E D -T - 37 - O S' N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended fo r

transistor smd q46

Abstract: 5962D9567101VPA 5962D9567101VPC HS-2600RH HS7-2600RH-Q HS7B-2600RH-Q smd transistor v2 SMD S5B smd transistor s3-b transistor smd q47
Contextual Info: HS-2600RH Data Sheet Radiation Hardened Wideband, High Impedance Operational Amplifier HS-2600RH is a radiation hardened internally compensated bipolar operational amplifier that features very high input impedance coupled with wideband AC performance. The

4x1N4001

Abstract: CL-21 capacitor cq 622 CQ 417 VDR07 VDR06 AEP02792 4307 VDR025 AES02793
Contextual Info: Power-Charge-Pump and Low-Drop Voltage Regulator TLE 4307 Power Charge Pump Circuit Features • • • • High Current Capability Short Circuit Protection Overtemperature Protection Active Zener Circuit P-TO252-5-1 Very Low Drop Voltage Regulator Features

TMOS E-FET

Abstract: 418C MTB3N60E1
Contextual Info: MOTOROLA Order this document by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK–SL Straight–Leaded

transistor c1850

Abstract: Samsung tv remote control circuit diagram k27 transistor KS5191 D560 transistor SMCS-51 S3C1850 C1850 transistor k58
Contextual Info: 2. S3C1850 S3C1850 DESCRIPTION S3C1850, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The S3C1850

transistor t05

Abstract: RZ3135B28W tRANSISTOR 2.7 3.1 3.5 GHZ cw NPN transistor 458
Contextual Info: 1 ^ 3 3 - J3 Philips Components RZ3135B28W Data sheet status Product specification date of issue June 1992 NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711005b ODMbSTO bflH ■ ÎPHIN D E S C R IP T IO N A P P L IC A T IO N

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Id e a l for m e d iu m -o u tp u t ap p lic atio n s • High g ain , low noise • S m a ll re v e rs e tra n s fe r c a p a c ita n c e

Silicon P-Channel Junction FET sot23

Abstract: DMOSFET p-channel P-Channel Enhancement FET uma* philips p-channel mos sot23 vertical mosfet BSS84 DMOSFET pchannel
Contextual Info: • Philips Semiconductors Data sheet status Product specification date of issue July 1993 ttS3"131 DDSBSIA BSS84 N AMER P H I L I P S / D I S C R E T E Silicon p-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is intended for use In general purpose and high­

Contextual Info: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM514190/SL is OKI's CMOS silicon gate process technology.

7044M

Abstract: 7042M SLA7044 PWM 555 DC MOTOR CONTROL IRL510
Contextual Info: AND MICROSTEPPING, UNIPOLAR PWM, HIGH-CURRENT MOTOR CONTROLLER/DRIVER The SLA7042M and SLA7044M are designed for high-efficiency and high-performance microstepping operation of 2-phase, unipolar stepper motors. Microstepping provides improved resolution without

Contextual Info: O K I Semiconductor MSM5 1V4800/SL 524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V4800/SL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM51V4800/SL is OKI's CMOS silicon gate process

Contextual Info: O K I Semiconductor MSM5 1V4800 /SL 524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4800/SL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM51V4800/SL is OKI's CMOS silicon gate process

Samsung tv remote control circuit diagram

Abstract: C185 transistor k54 KS5191 S3C1860 S3P1860 SMCS-51 transistor k52 S3C1840
Contextual Info: 3. S3C1860 S3C1860 DESCRIPTION S3C1860, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. The S3C1860 is the microcontroller which has 1024 bytes mask-programmable ROM. The S3P1860 is the microcontroller which has 1024 bytes one-time-programmable EPROM. In the S3P1860, the

Contextual Info: O K I Semiconductor MSM514900/SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 514900/SL is a new generation dynamic RAM organized as 524,288 words by 9 bits. The technology used to fabricate the MSM514900/SL is OKI's CMOS silicon gate process