MBB01 Search Results

BLY89C

Abstract: MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

TOP 948

Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
Contextual Info: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors

BF926

Abstract: BF926 philips PNP UHF transistor transistor BF926
Contextual Info: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and

MRB11040W

Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
Contextual Info: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an

bf241

Abstract: BF240 BF241 TO92 bF240 transistor bf241_ BF241 Philips
Contextual Info: BF240 BF241 PH IL IP S I N T E R N A T I O N A L 5bE D • 711DäEb G D 4 2 m 4 MOT ■ P H I N T-J t - HF SILICON PLANAR EPITAXIAL TRANSISTORS // NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in A M /FM receivers. QUICK REFERENCE DATA

Contextual Info: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

Contextual Info: bbSB^Bl QQ24453 MM•=! H A P X N AUER PHILIPS/DISCRETE BC846 BC847 BC848 b7E D J V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 Collector-emitter voltage V gE = 0 BC847 BC848

Contextual Info: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value

Contextual Info: PMBT5550 _ / v _ SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT-23 package. Q UICK REFERENCE D A T A Collector-base voltage open emitter

Contextual Info: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • QOEflflM? M3fl P h ilip s S e m icon d u ctors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FE A T U R E S • SM D encapsulation • Emitter-ballasting resistors for optimum temperature profile

BSR19A

Contextual Info: • bbSB^Bl 0DE5Sfl5 &E7 H A P X N AMER PHI LIPS/ DISCRE TE b7E T> BSR19 BSR19A yv SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.

Contextual Info: BSS63 _J V HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrominiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended fo r high voltage general purpose and switching

Contextual Info: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE J> bbS3^31 DOSfiOSfl Tbb IAPX PN3439 P N 3440 l SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors in a TO-92 envelope and intended for use in telephony and professional communication equipment.

Contextual Info: BF579 _J V SILICON PLANAR TRANSISTOR P-N-P transistor in a m icrom iniature envelope prim arily intended fo r u.h.f. applications in thick and th in -film circuits. Q UICK REFERENCE D ATA - v CBO max. 20 V Collector-em itter voltage open base

Contextual Info: bbSB^Bl 0D2Mb]i7 27T * A P X N AMER PHILIPS/DISCRETE BCX71 SERIES b7E J> J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.

Contextual Info: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures

jc33725

Abstract: JC337 JC337-25 JC337A jc33740 TO600 JC327 JC327A JC328 JC337-16
Contextual Info: • JC337 JC337A JC338 bbSBTai □□27c1b2 73fi HIAPX N AMER PHILIPS/DISCRETE b'ÌE ]> SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The JC337, JC337A, JC338 are complementary to the JC327, JC327A and JC328 respectively.

BDS940

Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
Contextual Info: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

bs33

Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages

IC 651

Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Contextual Info: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a

BF324

Abstract: BF324 philips transistor BF324
Contextual Info: BF324 r -ILips i n t e r n a t i o n a l SbE » 711G ö2b DO MElMb 2ÖS • P H I N T"3l-{7 H,F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended for r.f. stages in f.m. front-ends in common base configuration.

BSR13

Abstract: BSR14 CBO10
Contextual Info: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA