TRANSISTOR NPN 2A SWITCHING APPLICATIONS Search Results

2SD1162

Abstract: Darlington NPN Silicon Diode HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON darlington power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 400 Min. @IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial

ZUMT720

Abstract: ZUMT619 DSA003732
Contextual Info: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)

npn switching transistor Ic 100mA

Abstract: ZUMT619 ZUMT720
Contextual Info: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

BR 8050 D

Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

ZTX449

Contextual Info: PNP Silicon Planar Medium Power Transistor ZTX549 FEATURES • 1W power dissipation at Tsmb = 2 5 °C • 2A peak pulse current • Excellent gain characteristics up to 2A pulsed • Low saturation voltages • Fast switching • NPN complementary type available

PBSS4240

Contextual Info: PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications

Contextual Info: PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capability ․Improved device reliability due to reduced heat generation. APPLICATIONS ․Supply line switching circuits ․Battery management applications

MMBT8050

Abstract: MMBT8050 BR mmbt8050 sot-23
Contextual Info: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package

Contextual Info: Ordering number:EN3880 NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2084B [2SC4737] Features

Contextual Info: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications

Contextual Info: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications

2SC4737

Abstract: ITR07514 ITR07515 ITR07516 ITR07517
Contextual Info: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2084B [2SC4737] Features

zener Diode B21

Contextual Info: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching o f L load motor unit:mm drivers, printer hammer drivers, relay drivers . 2084B Features

STA3250

Abstract: SMD iC MARKING code 1A marking 1A SOT-89 STA325 STA3250F
Contextual Info: STC4250F Semiconductor NPN Silicon Transistor Applications • Power amplifier application • High current switching application Features • • • • Low saturation voltage: VCE sat =0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=2A

STA3250

Abstract: MARKING CODE SMD IC STA3250F STC4250F
Contextual Info: STC4250F Semiconductor NPN Silicon Transistor Applications • Power amplifier application • High current switching application Features • • • • Low saturation voltage: VCE sat =0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=2A

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)

2SCR542P

Abstract: T100
Contextual Info: Midium Power Transistors 30V / 5A 2SCR542P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) 2) High speed switching  Applications

2SCR512

Abstract: 2SCR512P T100
Contextual Info: Midium Power Transistors 30V / 2A 2SCR512P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) 2) High speed switching  Applications

T100

Abstract: 2SCR553P
Contextual Info: Midium Power Transistors 50V / 2A 2SCR553P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 700mA / 35mA) (1) 2) High speed switching  Applications

2SA1296

Abstract: 2SC3266
Contextual Info: TO SH IBA 2SC3266 TOSHIBA TRANSISTOR POWER AMPLIFER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm POWER SWITCHING APPLICATIONS • • . 5.1 MAX. Low Saturation Voltage : Vq ^ (sat) = 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296

2SC5172

Contextual Info: TO SHIBA 2SC5172 2 S C 5 1 72 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 10 ±0.3 Excellent Switching Times : tr = 0.5/^s (Max.), tf=0.3^s (Max.) at l£ = 2A High Collector Breakdown Voltage : V0 e o = 4OOV

2N6036

Abstract: 2N6039 NPN VCBO 80V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector–Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·High DC Current Gain: hFE = 750(Min)@IC= 2A ·Complement to Type 2N6036 APPLICATIONS ·Designed for general purpose switching and amplifier

2SC4737

Contextual Info: Ordering number:EN 3880 No.3880 2SC4737 NPN Epitaxial Planar Silicon Transistor I 50V/2A Driver Applications Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . F eatures . High DC current gain. • WideASO.