2SCR512 Search Results

Contextual Info: 2SCR512P 2SCR512PFRA Datasheet NPN 2.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 30V 2.0A MPT3 Base Collector Emitter 2SCR512PFRA 2SCR512P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR512PFRA

Contextual Info: 2SCR512P Datasheet NPN 2.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 2.0A MPT3 Base Collector Emitter 2SCR512P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR512P 3) Low VCE(sat) VCE(sat)=0.40V(Max.)

Contextual Info: 2SAR512R Datasheet PNP -2.0A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -2.0A TSMT3 Collector Base Emitter 2SAR512R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR512R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)

2SCR512R

Contextual Info: 2SCR512R Datasheet NPN 2.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 2.0A TSMT3 Collector Base Emitter 2SCR512R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR512R 3) Low VCE(sat) VCE(sat)=0.40V(Max.)

Contextual Info: 2SAR512P Datasheet PNP -2.0A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -2.0A MPT3 Base Collector Emitter 2SAR512P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR512P 3) Low VCE(sat)

2SCR512P

Contextual Info: Midium Power Transistors 30V / 2A 2SCR512P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) (2) (3) 2) High speed switching

2SCR512

Abstract: 2SCR512P T100
Contextual Info: Midium Power Transistors 30V / 2A 2SCR512P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) 2) High speed switching  Applications

Contextual Info: 2SAR512P 2SAR512PFRA Datasheet PNP -2.0A -30V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -30V -2.0A MPT3 Base Collector Emitter 2SAR512PFRA 2SAR512P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2SCR512PFRA

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.