TRANSISTOR NPN 100W AMPLIFIER Search Results

2sc5200

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943  ORDERING INFORMATION Order Number

KTC5200

Abstract: transistor npn 100w amplifier TO-3P KTA1943 transistor npn 100w amplifier TO-3P KTA1943
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC5200 TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. FEATURES • Complementary to KTA1943. • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

2sC3281

Abstract: Toshiba 2SC3281 100W AUDIO ic AMPLIFIER power amplifier 2sc3281 TRANSISTOR transistor 2SC3281
Contextual Info: i TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . Complementary to 2SA1302 . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

2SD110

Abstract: npn 100w transistor Ic 1A datasheet NPN transistor npn 100w amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD110 DESCRIPTION •High Power Dissipation: PC= 100W@TC= 25℃ ·High Current Capability: IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.

2sc5200 toshiba

Abstract: Toshiba 2SC5200 toshiba 2sc5200 audio power amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2SC5200 2sC5200, 2SA1943 audio amplifier 2SC5200 2-21F1A 2SA1943
Contextual Info: TO SH IBA 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 , 20.5MAX. • • Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. h m y - » f Hbt' "IsL

Toshiba 2SC3281

Abstract: 2sc3281 toshiba 2sc3281 transistor 2SC3281 2sc3281 transistor toshiba 2SA1302 TOSHIBA toshiba audio power amplifier Toshiba 2Sa1302 2SA1302 transistor npn 100w amplifier
Contextual Info: TOSHIBA Discrete Semiconductors 2SC3281 Transistor Unit in mm Silicon NPN Triple Diffused Type Power Amplifier Applications Features • Complementary to 2SA1302 • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings Ta = 25°C

2SC5200L

Abstract: 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifier circuit 2SC5200 2sc5200 amplifiers 2sc5200 amplifier 2sC5200, 2SA1943 TRANSISTOR 2SC5200 power amplifier 2sc5200 2sa1943 TRANSISTOR transistor npn 100w amplifier
Contextual Info: UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 TO-3PL *Pb-free plating product number: 2SC5200L ABSOLUTE MAXIMUM RATINGS TC = 25℃

power amplifier 2sc5200 2sa1943 TRANSISTOR

Abstract: 2sC5200, 2SA1943 2sa1943 amplifier 2SC5200 2sc5200 transistor 2-21F1A 2SA1943 2sc5200 toshiba 2SA1943 toshiba
Contextual Info: TO SHIBA 2SC5200 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 Unit in mm PO W ER AM PLIFIER APPLICATIONS , 20.5MAX. t • • ^3.3 ±0.2 ^ - Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

Contextual Info: TOSHIBA TRANSISTOR 2SD2155 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in ran . Complementary to 2SB1429 20.5 M A X #3.3 ±0.2 . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

power transistor audio amplifier 100w

Contextual Info: TOSHIBA 2SD2155 Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications F e a tu re s • Complementary to 2SB1429 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC

transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
Contextual Info: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

transistor 2SC5359

Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
Contextual Info: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
Contextual Info: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

tr 2sc5200

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
Contextual Info: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AM PLI FI ER APPLI CAT I ON S  FEAT U RES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943  ORDERI N G I N FORM AT I ON

Toshiba 2SC3281

Abstract: 2sc3281 toshiba 2SC3281 2sc3281 transistor toshiba 2SA1302 TOSHIBA transistor 2SC3281 instrumentation amplifier ic with 1A current 2SC3281 transistor 100-C 2-21F1A
Contextual Info: TO SH IBA TRANSISTOR SEMICONDUCTOR TO SHIBA TECHNICAL 2SC3281 DATA SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 Unit in mm PO W ER AM PLIFIER APPLICATIONS. 20.5M AX. • • 3-3 1 0.2 Complementary to 2SA1302 Recommend for 100W High Fidelity Audio Frequency Amplifier

RF POWER TRANSISTOR NPN mrf317

Abstract: transistor MRF317 MRF317 transistor npn 100w amplifier mrf317 datasheet ADVANCED POWER TECHNOLOGY EUROPE npn 100w npn 28v 100w amplifier
Contextual Info: MRF317 The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • • • • • • • Guaranteed performance at 150 MHz, 28 Vdc Output power = 100 W

Toshiba 2SC3281

Abstract: 2sc3281 transistor 2SC3281
Contextual Info: TOSHIBA 2SC3281 Transistor Unit in m m Silicon NPN Triple Diffused Type Power Amplifier Applications Features • Com plem entary to 2SA1302 • R ecom m ended for 100W High Fidelity Audio Frequency Amplifier O utput Stage A bsolute M axim um Ratings Ta = 25 C

MRF421

Abstract: transistor npn 100w amplifier CASE-211-11 MRF421 rf amplifier 100w npn 28v 100w amplifier
Contextual Info: MRF421 The RF Line NPN Silicon Power Transistor 100W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • • • Product Image Specified 12.5 V, 30 MHz characteristics —

Contextual Info: TOSHIBA 2SD2155 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE war m mr • vs sa r Unit in mm POWER AMPLIFIER APPLICATIONS 3.3 + 0.2 2Q.5MAX Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier O n fc rm t S fa c rp TT

2sc3281 transistor toshiba

Abstract: 2sc3281
Contextual Info: TOSHIBA Discrete Semiconductors 2SC3281 Transistor U n it in m m Silicon NPN Triple Diffused Type ¡ 0. 5MAX- a .3 ± Q 2 Power Amplifier Applications F e a tu re s • Complementary to 2SA1302 • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage

Contextual Info: 2SD2155 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. j— MAXIMUM RATINGS Ta = 25°C

Contextual Info: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

2SD2155

Abstract: 2-21F1A 2SB1429
Contextual Info: TOSHIBA 2SD2155 2 S D 2 1 55 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C