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    2SC5359 Search Results

    2SC5359 Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC5359
    Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(L); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(120W); Part Number: 2SA1987 Original PDF 121.17KB 4
    2SC5359
    Unknown Scan PDF 151.81KB 2
    2SC5359
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.26KB 1
    2SC5359
    Toshiba Silicon NPN triple diffused type transistor for power amplifier applications Scan PDF 174.9KB 3
    2SC5359
    Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF 173.55KB 3
    2SC5359-O
    Toshiba 2SC5359 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF 120.62KB 4
    2SC5359-O(Q)
    Toshiba 2SC5359 - TRANSISTOR NPN 230V 15A TO-3 Original PDF 120.62KB 4
    2SC5359-R
    Toshiba 2SC5359 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF 120.62KB 4
    SF Impression Pixel

    2SC5359 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SC5359-O(Q)

    Trans GP BJT NPN 230V 15A 180000mW 3-Pin(3+Tab) TO-3PL Tray
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    Verical 2SC5359-O(Q) 2,000 35
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    Avnet Americas 2SC5359-O(Q) Tray 100
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    Newark 2SC5359-O(Q) Bulk 1
    • 1 $2.75
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    • 100 $1.49
    • 1000 $1.39
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    Quest Components 2SC5359-O(Q) 1,600
    • 1 $3.98
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    • 100 $3.98
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    EBV Elektronik 2SC5359-O(Q) 21 Weeks 100
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    Vyrian 2SC5359R(Q) 781
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    2SC5359 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1987 2SC5359

    Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
    Contextual Info: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage


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    2sa19872sc5359-230v2sa1987 2sc5359+1100w audio ic amplifier PDF

    2SA1987 2SC5359

    Abstract: 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn
    Contextual Info: SavantIC Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage


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    2sc53592sa19872sa1987 2sc5359100w power amplifier+1100w npn PDF

    2sa1987 transistor equivalent

    Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS


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    2sa1987-230v2sc53592sa1987 transistor equivalent+4transistor 2sc5359power amplifier 2sc5359 2sa1987 transistor2sa1987 2sc5359power transistor audio amplifier 100w PDF

    2SA1987

    Abstract: transistor 2SC5359 2-21F1A 2SC5359
    Contextual Info: TO SHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO——230V (Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sa1987vceo----230v2sc5359transistor 2sc5359+12-21f1a PDF

    Contextual Info: 2SC5359 東芝トランジスタ シリコンNPN三重拡散形 2SC5359 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 230 V • 2SA1987 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


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    2sc53592sa1987 PDF

    Contextual Info: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sc53592sa1987----l20 PDF

    100-W

    Abstract: 2-21F1A 2SA1987 2SC5359
    Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


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    2sa19872sc5359100-w2-21f1a PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR
    Contextual Info: 2SA1987 TO SH IBA 2 S A 1 987 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sa19872sc5359transistor 2sc53592-21f1a+1power amplifier 2sc5359 2sa1987 transistor PDF

    transistor 2SC5359

    Abstract: 2SC5359
    Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


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    2sc53592sa19872-21f1atransistor 2sc5359 PDF

    Contextual Info: TO SHIBA 2SA1987 2 S A 1 987 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = -2 3 0 V Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sa19872sc5359 PDF

    Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


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    2sc53592sa1987 PDF

    transistor 2SC5359

    Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
    Contextual Info: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sc53592sa1987transistor 2sc5359tr 2sa1987+3power amplifier 2sc5359 2sa1987 transistor2-21f1a2sa1987 2sc5359 PDF

    Contextual Info: TOSHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 3.3 + 0.2 2Q.5MAX • High Collector Voltage : V q e O “ —230V Min. • Complementary to 2SC5359 • Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sa1987--230v2sc5359 PDF

    2SA1987 2SC5359

    Abstract: 2SC5359 100W AUDIO AMPLIFIER 2SA1987
    Contextual Info: Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage


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    2sc53592sa19872sa1987 2sc5359100w audio amplifier PDF

    2Sa1987

    Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


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    2sa19872sc53592-21f1a PDF

    transistor 2SC5359

    Abstract: 2SC5359
    Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C


    Original
    2sc53592sa19872-21f1atransistor 2sc5359 PDF

    Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


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    2sa19872sc53592-21f1a PDF

    Contextual Info: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sc53592sa1987 PDF

    transistor 2SC5359

    Abstract: 2SC5359 100-W 2-21F1A 2SA1987
    Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C


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    2sc53592sa1987transistor 2sc5359100-w+12-21f1a PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
    Contextual Info: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan
    2sc53592sa1987transistor 2sc53592-21f1a+12sc53 PDF

    2SA1987 2SC5359

    Abstract: 2sa1987 100W AUDIO ic AMPLIFIER 2sa198 2SC5359
    Contextual Info: SavantIC Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC5359 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio


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    2sa19872sc5359-230v2sa1987 2sc5359+2100w audio ic amplifier2sa198 PDF

    100W AUDIO ic AMPLIFIER

    Abstract: 2SA1987 2SC5359 100w audio amplifier 2SA1987 2SC5359
    Contextual Info: Inchange Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio


    Original
    2sa19872sc5359-230v100w audio ic amplifier+2100w audio amplifier2sa1987 2sc5359 PDF

    Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original
    2sa19872sc5359 PDF

    transistor 2Sc5359

    Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
    Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings Tc = 25°C


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    2sc53592sa1987transistor 2sc53592sa1987 2sc5359+2100-w2-21f1a PDF