TRANSISTOR MARKING CODE 012 Search Results

Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor

BC 170 transistor

Contextual Info: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611

SIEMENS BST 68

Abstract: SIEMENS BST 68 L
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

marking bt5

Contextual Info: BCR 148S SIEMENS NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvaniv internal isolated Transistors driver circuit • Built in bias resistor (R1=47kiì, R2=47Kfl) 02 fi Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

012n3

Contextual Info: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W

Contextual Info: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type

Contextual Info: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

MARKING CODE T7s

Abstract: MARKINGCODET7s
Contextual Info: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E

Contextual Info: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23

Contextual Info: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type

Contextual Info: SIEMENS BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=47kfl, R2=22kfl BCR 146 WLs 1 =B Q62702-C2260 Package 2=E It Pin Configuration CO Marking Ordering Code o Type

Contextual Info: SIEMENS BCR 158 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor Ri=2.2ki2, R2=47k£2 □ Pin Configuration Q62702-C2338 1 =B Package II CO WIs O Marking Ordering Code BCR 158 LU II

Contextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E

M7A transistor

Abstract: transistor M7A Q62702-C2340
Contextual Info: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II

Contextual Info: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type

Contextual Info: S IE M E N S BCR 133S NPN Silicon Digital Transistor Array »Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistors (R-|=10kA, R2=10kfl) Type BCR 133S Marking Ordering Code Pin Configuration