A53SBOS Search Results

c535

Abstract: 80C535 80c515 poe cci 1033 siemens 80C535 microcontroller 80c535-n sab-80535 80C51 sab80c51 B158-H6579-X-X-7600
Contextual Info: SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

siemens 30 090

Abstract: Q67006-A9275 TLE 4207 G
Contextual Info: S IE M E N S 1 -A D u a l-H B D D u a l-H a lf-B rid g e Driver TLE 4207 Overview Features Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode Low saturation voltage; ty p .l .2 V total @ 25 °C; 0.4 A

sda0808

Contextual Info: tüE 1 • «235tOS 0050247 857 « S I E G SIEMENS SIEMENS AKTIENfiESELLSCHAF Microprocessor-Compatible 8-Bit A/D Converters with 8-Channel Multiplexer Prelim inary Data SDA 0808 SDA 1808 ACM OS 1C Features • • • • • • • • • • • • •

Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

Contextual Info: SIEMENS 8M X 32-Bit Dynamic RAM Module HYM 328020S/GS-50/-60 Preliminary Information • 8 388 608 words by 32-bit organization alternative 16 777 216 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time

TDA 4600-2

Abstract: tda4600 BY360 Q63100-P2462-J29 TDA4601D tda4601 SMPS CIRCUIT DIAGRAM TDA 4600 class d amplifier tda Q63100 P2462-J29
Contextual Info: bGE D SIEMENS fl235bGS OOMTMbl EOb « S I E G SIEMENS AKTIENGESELLSCHAF -pStf-ll-31 Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic

Contextual Info: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type

siemens cpu 416

Abstract: siemens 3tb 40 siemens saf 300 80C52 SAB-C503 SAB-C503-LN SAF-C503 SIEMENS 3TB Digital Pulse Counter - Single Digit ROM 8K x 8
Contextual Info: SIEMENS 8-Bit CMOS M icrocontroller SAB-C503 Preliminary • • • • • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12 / 20 MHz operating frequency 8 K x 8 ROM SAB-C503-1R only 256 x 8 RAM Four 8-bit ports, (including one input port for digital or analog input)

TDA4819

Contextual Info: bOE i m 4S35bOS 005G077 725 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF - P S 8 - U Power Factor Controller PFC - 3 I TDA 4815; TDA 4818; TDA 4819 IC for High Power Factor and Active Harmonic Filtering Advance Information Bipolar IC Features • Power factor approaching 1

Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 R O M S A B 8 0 C 5 1 5 only

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166/83C166 • • • • • • • • • • • • • • • • • • • • • • • • • • SAB 80C166/83C166 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline

LD275 led

Abstract: MARKING 73 LD275 A235L SFH 567 siemens LD LD274
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 LD 275 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Sehr enger Abstrahlwinkel LD 274 • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren

tuner 3402

Abstract: TRANSISTOR SMD MARKING 2 HA SDA34 XP113 smd transistor marking P7
Contextual Info: bSE D • ÔE 3 S b OS 0G53554 774 WÊSIZG S IE M E N S SIEMENS A K T I EN GE SE LLS CH AF; GHz PLL with I 2C Bus, In-Lock Detector and four programmable Chip Addresses SDA 3402X Bipolar 1C Preliminary Data Features • 1 - chip system for MPU control I2C bus

SLE 4404

Abstract: Siemens SLE SLE4404C 416B GTM05366 SLE4404M2
Contextual Info: SIEM EN S Intelligent 416-Bit EEPROM with Internal PIN Check S L E 4404 Features • 416 x 1 bit organization • 208-bit user memory which can be configured as ROM , P R O M , read-protected P R O M and read-protected RO M • User memory protected by means of a changeable user

Transistor BFR 91

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 91 • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 91 BFR 91

siemens igbt BSM 300

Abstract: siemens igbt BSM 200 GA 120 NC4000
Contextual Info: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes

Contextual Info: SIEMENS 8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 328000GD-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

RXTNB 2

Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9

Contextual Info: Snap-In Capacitors L L Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board

zener Diode B23

Abstract: B23 zener diode MQ 6 SENSOR pin diagram B23 j ZENER DIODE MQ 5 SENSOR pin diagram 45VTYP BTS612 VOC sensor BTS612 applications ST BUN
Contextual Info: Preliminary data SIEMENS BTS 612 TWO CHANNEL PROFET Description PROFET R an intelligent p ow er switch with integrated T w o in d e p e n d e n t high -sid e switches O verte m p e rature p rotection fo r each channel O v e rlo ad protection fo r each channel

all transistor book

Abstract: SMD DIODE BOOK TRANSISTOR SMD MARKING CODE 607 transistor marking smd 7c TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD 613 smd transistor AFQ 36 C67078-S1317-A3 diode SMD MARKING CODE 607 smd code book
Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds fc ^DS on Package Ordering Code BUZ 73 A 200 V 5.5 A 0.6 i i TO-220 AB C67078-S1317-A3 Maximum Ratings Symbol Parameter Continuous drain current Values Unit A b 5.5

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller SAB-C503 Preliminary • • • • • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12 / 20 MHz operating frequency 8 K x 8 ROM SAB-C503-1R only 256 x 8 RAM Four 8-bit ports, (including one input port for digital or analog input)

Contextual Info: SIEMENS BAT 30 Silicon Schottky Diode • R F detector • Low-power mixer • Zero bias • Very low capacitance • For frequencies up to 25 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency band GHz Ordering Code

Contextual Info: SIEMENS TEMPFET BTS112A Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type Vos h ^DS<<m Package Ordering Code BTS112A 60 V 12 A 0.15 0