FL235LD5 Search Results

Contextual Info: û235bOS 00Û13B3 1 % SIEMENS HITFET BTS 933 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source Input protection ESD On-state resistance Thermal shutdown Current limitation

Contextual Info: SIEMENS Triple 8-Bit Analog-to-Digital-Converter SDA 9205-2 CMOS 1C Preliminary Data Features • • • • • • • Three equivalent CMOS A/D converters on chip 30-MHz sample rate 8-bit resolution No external sample & hold required On-chip input buffer for each analog channel

Contextual Info: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5

SIEMENS THYRISTOR bst

Abstract: Thyristor bst 2 thyristor BSt
Contextual Info: SIEMENS TEMPFET BTS 132 Features • • • • • N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type VDS I0 BTS 132 60 V 24 A ^DS on 0.065 Cl 1 2 3 G D S Package

Contextual Info: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor

12 AX 7 WA / ECC 83

Contextual Info: SIEMENS 4M x 72-Bit EDO-DRAM Module ECC-Module 168 pin buffered DIMM Module HYM 72V4005GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, buffered 8 Byte Dual In-Line Memory Module for PC main memory applications • 1 bank 4M x 72 organization • Optimized for ECC applications

514256BZ-70

Abstract: 514256BJ-70 514256 CCC-13 514256b-70 514256b-60 BL6040
Contextual Info: SIE M E N S 256 K X 4 -B it D ynam ic RAM Low Pow er 256 K x 4-B it D ynam ic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BU B JL/BZL-60/-70 Advanced Information • • 262 144 words by 4-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 514256B/BL-60

Q67100-Q765

Abstract: 514100
Contextual Info: SIE M E N S 4 M x 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 514100BJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 A d v a n c e d In fo rm a tio n • 4 194 304 words by 1-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time