TRANSISTOR LD25 Search Results

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

ht 25 transistor

Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

lg ipm

Abstract: PHT11N06T 25C312
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET PHT11N06T GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the

Contextual Info: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK454-500B

Abstract: BUK454 BUK454-500A T0220AB
Contextual Info: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK445

Abstract: BUK445-60A BUK445-60B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: bbS3T31 0030550 T5T H A P X N AUER PHILIPS/DISCRETE Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

DIODE T25 4 EO

Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
Contextual Info: fc,SE i> PHILIPS INTERNATIONAL m 711Qfl2b QObMlll b4H « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

YBs transistor

Abstract: BUK437-400B
Contextual Info: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK437-500B

Contextual Info: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

K638

Abstract: idm 73
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK437-400B

Abstract: DIODE JS.4 GS 069 LF
Contextual Info: N ANER P H I L I P S / D I S C R E T E LTE D • bbSBSBl D030MÔD BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-chanrtel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

LD25C

Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor Ip

Abstract: BUK426-200A BUK426-200B
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE bbSBTBl D 0ÜSÜ5S0 5 B U K 426-200A B U K 426-200B PowerMOS transistor T -3 7 -il QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

Contextual Info: N AUER PHILIPS/DISCRETE bSE ]> bbS 3T31 0 0 30 7B 0 45= • APX Philips Semiconductors Product Specification Pow erM OS transistor Logic level FET_ G E N E R A L D E S C R IP T IO N N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK545

Abstract: BUK545-100A BUK545-100B
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'iE J> ^53^31 QD307bS I ME • Product Specification Philips Semiconductors PowerMOS transistor BUK545-100A/B Logic level FET_ _ _ _ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE » • TGITBSD D D 1 7 ti ñ G T «TOSM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP253 MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HICH CURRENT SWITCHING APPLICATIONS. aieuAi. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR

Contextual Info: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation

Contextual Info: TOSHIBA D I S C R E T E / O P T O H5E D • TOSHIBA FIELD EFFECT TRANSISTOR TOTTSSD OOlV^bt 5 «TOSM - YTFP150 SILICON N CHANNEL MOS TYPE (ir - MOSI) IP s -_ 1, INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

BUK426-50A

Contextual Info: PH IL IPS I N T E R N A T I O N A L 5bE » 711002b GG44115 4^3 « P H I N Philips Components Data sheet status Product specification date of issue March 1991 BUK426-60A/B 7^3?-// PowerMOS transistor Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode

NE555 dip pin configuration

Contextual Info: I j I/I \ 1 A dvanced L in e a r ALDI 502/ALD2502 D e v ic e s , In c . SINGLE/DUAL PRECISION HIGH SPEED MICROPOWER TIMER G ENERAL DESCRIPTION APPLICATIONS The ALD1502/ALD2502 timers are high performance single/dual monolilhic timing circuits built with advanced silicon gate CMOS technology.