Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    TRANSISTOR LD25 Search Results

    TRANSISTOR LD25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    TRANSISTOR LD25 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR LD25

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    OCR Scan     		buk581-100aot223buk581-100a+1transistor ld25 PDF

    LD25C

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		buk553-100a/bbuk553-100a-100b+2buk553-1ooa/bld25c PDF

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		buk545-60a/bbuk545 PDF

    k552

    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BU K552-1OOA/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		k552-1ooa/bbuk552-100a-100b+2buk552-100a/bk552 PDF

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		buk542-100a/bbuk542-100a-100b+1ot186 PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


    OCR Scan     		buk566-60h PDF

    LD25C

    Abstract: GS12-16
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		buk565-200ald25cgs12-16 PDF

    LD25C

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche


    OCR Scan     		phd3055lld25c PDF

    TRANSISTOR S 838

    Abstract: 600 V logic level fet
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK562-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		buk562-100asqt404transistor s 838600 v logic level fet PDF

    BUK416-1OOAE

    Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		buk416-100ae/bebuk416-100ae-100be+6ot227bbuk416-1ooae/bebuk416-1ooaebuk416-100bebuk416-100aetransistor 136 138 140 PDF

    ht 25 transistor

    Abstract: BUK638-500B
    Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		buk638-500b711dflsbodb431sht 25 transistor PDF

    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		buk437-400bfig13 PDF

    lg ipm

    Abstract: PHT11N06T 25C312
    Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET PHT11N06T GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the


    OCR Scan     		pht11n06tot223lg ipm25c312 PDF

    ld 18

    Abstract: TRANSISTOR LD25
    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		buk482-100aot223ld 18transistor ld25 PDF

    Contextual Info: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		0db431bt0220abbuk655-500b711002b+1aab432d PDF

    PHB80N06T

    Abstract: T404
    Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan     		phb80n06tot404t404 PDF

    PHB65N06T

    Abstract: T404
    Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan     		phb65n06tot404t404 PDF

    GIS 110 kV

    Contextual Info: Philips Semiconductors Product specification BUK9880-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very


    OCR Scan     		buk9880-55ot22335\imgis 110 kv PDF

    BUK454-500B

    Abstract: BUK454 BUK454-500A T0220AB
    Contextual Info: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		buk454-500abuk454-500bbuk454-500a+3-500bt0220abm89-1160/rc PDF

    BUK443-60A

    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		buk443-60a/bbuk443ot186buk443-60a PDF

    EUK442

    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		buk442-100a/beuk442-100a-100b PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		buk7508-55t0220ab-id/100 PDF

    BUK445

    Abstract: BUK445-60A BUK445-60B
    Contextual Info: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		711002bbuk445-60a/b-sot186ds/v-12/+4id/100buk445buk445-60abuk445-60b PDF

    LD25V

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		buk9510-30t0220abld25v PDF