TRANSISTOR K 525 Search Results

TRANSISTOR BC 252

Abstract: BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954
Contextual Info: 7^5gS37 P05A771 G • ^ T ' 3 3 - 3 SGS-THOMSON B U V 56 s lü iO T K s K S S G S-THOMSON 3GE D FAST SWITCHING POWER TRANSISTOR ■ SUITABLE FOR SWITCH MODE POWER SUP­ PLY, UPS, DC AND AC MOTOR CONTROL DESC RIPTIO N High voltage, high speed transistor suited for use on

Contextual Info: 2N5886 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N5886 is a Power Transistor for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 I.* ” .1 35 I MAX. MAXIMUM RATINGS lc 1 .1 V ,420 P diss II ,Q3»~ -^J-» .043 f? K* 200 W @ Tc = 25 °C

Contextual Info: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

TAG 92 transistor

Abstract: philips transformer 524 BSS100 BSS100 TO92 BTB 134
Contextual Info: 711Gû2ti 00tj7BflH Ô15 M P H I N Philips Semiconductors Data sheet status Product specification date of issue November 1990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K REFERENCE DATA Direct interface to C-MOS, TTL, etc.

SD1492

Abstract: M 208
Contextual Info: SD1492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1492 is a Common Emitter Device Designed for Class AB operation in UHF Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG. A A FULL R TJ .050 NOM. G H I J K

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

Contextual Info: 2N6054 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6054 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 8.0 A lc -80 V ce 100 W @ T C = 25 °C P diss 65 °C to +200 °C

Contextual Info: 2N6306 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O - 3 k. I MAX. MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V ce 250 V P diss 125 W @ Tc = 25 °C 3 MAX.

2SK3132

Abstract: K313 2SK313
Contextual Info: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS

2SK3131

Contextual Info: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS

K3131

Abstract: 2SK3131
Contextual Info: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TO-3P (L)

Contextual Info: m 2N6496 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6496 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 15 A lc V 110 V ce 140 W @ T C = 25 °C P diss -65 °C to +200 °C Tj

transistor BC 245

Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time

Contextual Info: 2N6052 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc -100 V ce 150 W @ T C= 2 5 °C P diss -65 °C to +200 °C

Contextual Info: 2N6059 m \\ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc 100 V ce 150 W @ T C = 25 °C P diss -65 °C to +200 °C

Contextual Info: 3mm IR Detectors Photo Transistor Dîalîght 551-7610 1.57 [.062] Features 6.35 -[.2 5 0 ]- • • • • • 3.00 .118] DIA. T 3.67 [.149] DIA. COLLECTOR k' _ 6.41 _ [.253] .50 •(.0201 I 2.54 L TYP ^ jk 0 1 -10 T ABSOLUTE M A X IM U M RATINGS (TA=25°C

10DC

Abstract: TPIC6B259
Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 -A P R IL 1994 • Low r D s 0 n • • . 5 £ 2 Typical • Avalanche Energy . . . 30 mJ • Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current • • • • D w OR N p a c k a g e

Contextual Info: m 2N6677 \ \ SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. P A C K A G E STYLE T O - 3 MAXIMUM RATING S lc 15 A Ib 5.0 A ce 400 V P d is s 175 W @ Tc = 25 °C

2SD5250

Abstract: 2SD525 transistor 2sd525 a935 2SD525-Y 2SD525R 2SD525-0 AC75 A 935 2SD525Y
Contextual Info: * 2/ ' J D V N P N = » E I R ^ + H B h 5 > 2; ^ SILICON NPN T RIPLE DIFFUSED M ESA TRANSISTOR o % o u m m 2 s d 525 m Power Unit Amplifier Applications in 1CL3MAX. É f¿ 3 .6 ± X Z O e-î • x m z i H i - p i t ^ y m t i S K i s v t - r •. • ¡SiHET-fo

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PA CKAGE D E V IC E TY PE IW cE O VOLTS PEA K Ic A M PS ^FE m in /m ax IC @ V C£ A V m ax VOLTS Ic @ I b A A N PN T O -258 N SP 4865 80 90.0 10-40 70.0/5.0 2.2 70.0/7.0 N S P 4866 120 90.0 10-40

Contextual Info: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

driver for stepper motor

Contextual Info: SIEMENS 2.5-A High Performance Smart Power Stepper-Motor Driver with Diagnostic Interface TLE 5250 SPT-IC Overview Features • • • • • • • • • • • • Single phase driver for stepper motor 2.5 A Low ON-resistance typical 0.3 Q Wide supply range 6 V to 45 V

tddr 5250

Abstract: P-SIP-15-1 COIL TLE 5250 c 5250 tle5250 driver for stepper motor TRANSISTOR Q2
Contextual Info: TLE 5250 2.5-A High Performance Smart Power Stepper-Motor Driver with Diagnostic Interface SPT-IC Overview Features • • • • • • • • • • • • Single phase driver for stepper motor 2.5 A Low ON-resistance typical 0.3 Ω Wide supply range 6 V to 45 V