L9110
Abstract: DIODE aay 49
Contextual Info: /T T SGS-THOMSON ^7# SD1492 RF & MICROWAVE TRANSISTO RS _ TV/LINEAR APPLICATIONS • . ■ . . ■ . ■ . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS
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SD1492
Abstract: M 208
Contextual Info: SD1492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1492 is a Common Emitter Device Designed for Class AB operation in UHF Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG. A A FULL R TJ .050 NOM. G H I J K
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SD1492
Abstract: R767 16 AWG 400S M175 GE DIODE push pull class AB RF linear l21 diode
Contextual Info: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 150 W MIN. WITH 6.5 dB GAIN
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5q 1265 rf
Abstract: DIODE aay 49
Contextual Info: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION
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SD1492-2
Contextual Info: SD1492-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1492-2 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG. A FEATURES INCLUDE: • Gold Metalization
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push pull class AB RF linear
Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE
Contextual Info: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING POUT = 150 W MIN. WITH 6.5 dB GAIN
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sd1492push pull class ab rf linearr767box63b+3400sm175ge diode
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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CM45-12A
Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
Contextual Info: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA
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tp2304
Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12
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am1214-100am1214-200am1214-325am80912005+16am80912015am80912030am80912085am80912150am81214006am81214015tp2304tpv3100tp9383tp2330mrf2001pt9783pt9780tp8828fbly93amrf 406 application circuit
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power transistors cross reference
Abstract: TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492
Contextual Info: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave
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SD1439
Abstract: TCC593 power transistors cross reference M119 M122 M175 SD1437 SD1448 SD1449 SD1732
Contextual Info: SILICON POWER TRANSISTORS UHF TV/LINEARTI iä,V " ï;-,.'-. SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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cdma20002n6084blv102ca5815cs+15d1020uklf2810amrf175lvmsc75652ph1600-7sd1466transistor 5cwtransistor 5cw 61transistor 6cwtransistor replacement guide6cw transistorms3016transistor selection guideph1516-2stm1645-10
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TPV3100
Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE
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twf150-50fhf150-50shf250-50hf100-28+16hf220-28hf220-50tvu014hf75-50sasat25asi4003tpv3100tp3024ahf power amplifier tpv3100pt9783mrf466mrf4070tp9383tp2304mrf433mrf492a
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2T3130A9
Abstract: HEP310 kp303g kt117 HEP-310 kt117b kt117a KT117G kt816g kt3102e
Contextual Info: Tranzistory -Speciální KT117AM KT117BM KT117G KT117GM KT117VM 2N1923 2N739 BSV56C, HEP310 2N844 2N1573 Øízené polem 2P934A KP302A KP302A KP302B KP303B KP303G KP303V KP305A KP307Ž KP333A KP333B KP402A KP909A,B,V KP922A KP922A1 KP935G KP960A, B, V
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TPV-3100
Abstract: TPV3100 TPV595 BLX98 BFQ68 Applications UTV020 CD2811 UTV040 CD2812 TVV100
Contextual Info: ADVANCED SEMICONDUCTOR, IN C TRANSISTORS FOR BROADCAST APPLICATIONS Vour Single Source for Transistors 7525 ETHEL AVE. * NORTH HOLLYWOOD, CAUFORNIA 91605 • U.S.A. TEL: 8 18 982-1200 ♦ (800) 423-2354 * FAX: (818) 765-3018 * e-mail: asiusa@asi.ccmail.compuserve.com
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X200C
Abstract: SD4100
Contextual Info: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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XM122
Contextual Info: SFJIIIS SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave
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