TRANSISTOR J 59 Search Results

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

5n06v

Abstract: 5n06 TMOS E-FET AG3B CASE369A
Contextual Info: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER

blw95

Contextual Info: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a

wacom

Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
Contextual Info: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

Contextual Info: 2N3822 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency amplifier applications. The 2N3822 features low gate leakage current and low input capacitance.

BFS22A

Contextual Info: N AUER PHILIPS/DISCRETE bTE bbS3^31 DD5fl7ES Ifl? I IAPX BFS22A J> V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran­

PH2729-65M

Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

P77 transistor

Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry

GL5672

Contextual Info: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J

Contextual Info: r z j SGs m o M s o N TEA2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A CURRENT LIMITATION TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­

Contextual Info: 2N3055SPL MJ2955SPL 2N3055SPL MJ2955SPL NPN POWER TRANSISTOR PNP POWER TRANSISTOR General Purpose Switching and Amplifier Applications DIM A B C D E F G H J K L M MIN - 6,35 0,96 29,90 10,69 5.20 16,64 11,15 - 3.84 ABSOLUTE MAXIM UM RATINGS Collector-base voltage open emitter

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

BT 156 transistor

Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
Contextual Info: File No. 655 . □uobz/d RF Pow er Tran sisto rs Solid State Divi8ion 40637A Silicon N-P-N Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy V H F Transmitters Features: • High transistor dissipation rating P j = 2 W max.

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15TB-2HB ! MEDIUM POWER SWITCHING USE | _ INSULATED TYPE j QM15TB-2HB • • • • • lc Collector current.15A Vcex Collector-emitter voltage.1000V hFE

Contextual Info: h 7 > V ^ £ /Transistors 2SD1506 2SD1506 7 V -/B N P N y ' J i > h ? > y * $ 1SUl§}j£it:£j*^llif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ J fJ ^ iilO /D im e n s io n s U n it: mm V ;V vHt 1) V CE ( s a i) = 0 .5V (T yp.)

BFG65 transistor

Contextual Info: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband

t 30 55el

Abstract: LL903 transistor 81 120 w 63 LL-903 PH1214-40M PH1214-55EL ph1214-40 transistor 81 120 w 55 1035 transistor PJ 81
Contextual Info: an AMP comDanv Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL 1.2 - 1.4 GHz v2.00 Features l l l l l l l l 903 22 85 J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors

2SC594

Abstract: transistor WLM Produced by Perfect Crystal Device Technology
Contextual Info: 5 / 'J D > N P N X t : ^ 5 / ? J W B S 5 > y ^ P C T S Ä 2 s c 594 ^ IL IC O N NPN EPITAXIAL TRANSISTOR Æ O x x m (PCT it X PROCESS) m m INDUSTRIAL APPLICATIONS X 4 » * S S R o High Frequency Amplifier and Video Amplifier Applications o High Speed Snitching Application»

GMA06

Contextual Info: CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

LA 7687 a

Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)

Contextual Info: N AMER P H I L I P S / D I S C R E T E • b'lE D bbS3^31 DD2RM41 2fl3 BLW84 J APX V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters with a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaranteed to with­