TRANSISTOR J 59 Search Results

NPN TRANSISTOR SC-70

Contextual Info: UMW12N/FMW12 h 7 > y ^ ^ /Transistors IIM 1 A M O N FMW12 r a T J U S - i - J U K h 7 > V * * / D u a l Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor Ü Ü'/l&iBliffl/RF Amplifier • w* ^M ^j& B /D im en sio n s Unit : mm 1) UMT (SC-70), SMT (SC-59) tW\ —

Contextual Info: DTC363EK Digital transistor, NPN, with 2 resistors Features Dimensions Units: mm • • available in SMT3 (SMT, SC-59) package DTC363EK (SMT3) 19x02 package marking: DTC363EK; H27 J llD i 095 • in addition to standard features of digital transistor, this transistor has:

MPS6560

Abstract: audio transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC D MPS6560 J 7Tbm4£ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR AUDIO TRANSISTOR • Collector-Emitter Voltage: V CEo = 2 5 V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM J W IN G S (Ta=25°C) Characteristic Collector-Base Vbltage

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

QM15TB-24B

Abstract: A3102 QM15
Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM15TB-24B MEDIUM POWER SWITCHING USE _ iNSULATED TYPE j f •i i i • Ic Collector current. 15A • V cex Collector-emitter voltage. 1200V • hFE DC current gain. 250

MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Contextual Info: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart­

GMBTA13

Contextual Info: GMBTA13 NPN Silicon Elektroni sche Bauelemente Epitaxial Transistor A suffix of "-C" specifies halogen & lead-free SC-59 A L DESCRIPTION S The GMBTA13 is designed for Darlington Amplifier Transistor. 2 3 Top View Dim Min Max B 1 D J C * Voltage VCES=30V •Collector-Emitter

qm75ha-h

Contextual Info: MITSUBISHI TRANSISTOR MODULES j I QM75HA-H | HIGH POWER SWITCHING USE ! INSULATED TYPE j QM75HA-H • Ic • V cex • hFE Collector current. 75A Collector-emitter voltage. 6 0 0 V DC current gain. 75

transistor military

Abstract: 2N1358
Contextual Info: h/ ttt _o_iflKnn/ioori X O O \-> J L Y U L A J - k j - A <7 U U U / A TV/TT?‘M T \ A/TTT XT TP x1 < n . 1 T A A J 1 1 x y X T 1 X J J l ^ JL 21 March 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTOR. PNP. GERMANIUM, HIGH-POWER TYPE 2N1358 This amendment forms a part of Military Specification MIL-S-19500/122C,

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

BFW61

Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
Contextual Info: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.

5n06v

Abstract: 5n06 TMOS E-FET AG3B CASE369A
Contextual Info: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER

blw95

Contextual Info: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a

wacom

Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
Contextual Info: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

Contextual Info: 2N3822 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency amplifier applications. The 2N3822 features low gate leakage current and low input capacitance.

Contextual Info: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA

J200M

Contextual Info: h 7 'y UMC4N FMC4A • UM C4N/FM C4A 2 /Transistors /Dual Mini-Mold Transistor NPN/PNP v 'J3> Epitaxal Planar NPN/PNP Silicon Transistor Z -4 "J f - > ? Ulfe/Switching Circuit 1W f * \r ; ä E l /Dimensions Unit : mm « Ä 1) UMT (SC-70), SMT (SC-59) t |h] -

BFS22A

Contextual Info: N AUER PHILIPS/DISCRETE bTE bbS3^31 DD5fl7ES Ifl? I IAPX BFS22A J> V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran­

se5020

Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Contextual Info: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES

PH2729-65M

Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

BFW61

Contextual Info: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA

P77 transistor

Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry

2N3904

Abstract: MPS6520 10v200
Contextual Info: SAMSUNG SEMICONDUCTOR INC 1_*»E D MPS6520 j ? ci { , 4 1 4 2 0007325 fl | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=250C) r

BST74A

Contextual Info: BST74A J _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer