TRANSISTOR IR 324 A Search Results

Contextual Info: AVANTEK INC MME D B l l M n t b 0D0Ô33S T H A V A LNO-550 Low N oise Varactor-Tuned O scillator E E C -"T -S C u C A FEATURES • Low FM/Pha$e Noise • 10 mW Minimum Output Power • Low Cost • Reliable Thin-Film Hybrid Construction • Hermetic TO-8 Miniature Package

M54533P

Abstract: 251C relay 101-100 154 Diode Mitsubishi VKST
Contextual Info: • b3E b EM^Û E? D G ISG IB M ITSU B ISH I DGTL f iñb ■ M I T 3 MITSUBISHI BIPOLAR DIGITAL ICs M54533P LOGIC 6-UNIT 320mA TRANSISTOR ARRAY W ITH CLAMP DIODE AND STROBE DESCRIPTION T h e M 54533P, 6 -c h a n n e l sink driver, consists of 12 N P N tran­

Contextual Info: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

FT5764M

Abstract: FT5764 ft5767m FT57 T-43-25
Contextual Info: FUJITSU MICROELECTRONICS 31E » E3 3 7 4 ^ 2 ODlbbTb T BiFMI Cp January 1990 Edition 1.1 T'-M'IS' FUJITSU PRODUCT PROFILE'- FT5764M, FT5767M Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS {Ta = 25° C Sym b o l Rating Storage Temperature

transistor bc 325

Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Contextual Info: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

photo transister

Abstract: PHOTO TRANSISTOR transister "photo transistor" photo coupler photo coupler specification OC340
Contextual Info: O K I electronic components OC340 PHOTO COUPLER GENERAL DESCRIPTION The OC34C is a photo coupler formed by combining a GaAs infrared light emitting diode and a phototransistor. Encased in a 6-pin plastic package, the CKZ340 is suitable for such applications as an

bt 44a

Abstract: Transistor 2TY npn photo transistor P042A
Contextual Info: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life

tfk 325

Abstract: BFX340 bfx 34 tfk B tfk transistor BFX34
Contextual Info: W BFX 34 O Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: H ochstrom schalter, Relaistreiber, Leistungsverstärker, Strom bis 5 A Applications: High current switches, relay drivers, and p o w e r am plifiers, current up to 5 A

Contextual Info: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage

stk401

Contextual Info: Ordering number : EN 5248 _ Thick Film Hybrid 1C _STK401 -220 AF Power Amplifier Split Power Supply (15W + 15W min, THD = 0.08%) Overview Package Dim ensions The STK401-220 is a 2-channel audio power amplifier IC

Contextual Info: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

Contextual Info: fZ 7 S G S -T H O M S O N “ [» ^ lU O T Iw r e s 7# L 7 8 M 0 0 A B S E R IE S PRECISION 500mA REGULATORS • OUTPUT CURRENT UP TO 0.5A ■ OUTPUT VO LTAGES OF 5 ; 6 ; 8 ; 12 ; 15 ; 18 ; 20 ; 24V ■ THERM AL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION

Contextual Info: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE £s2502L1V V MULTI PHOTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are optically coupled HIGH ISOLATION VO LTAG E

Contextual Info: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

KF 517

Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"

h22al

Abstract: H22A1 k 1094 transistor transistor 736 H22A2 354A-01 H21A3 IR h22a1 H21A1 H21A2
Contextual Info: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA mmmmmmmmmmmm Slotted O ptical S w itches T ra n sisto r O utput Each d e v ice c o n s is ts o f a g a lliu m a rse n id e in fra re d e m ittin g d io d e fa c in g a s ilic o n N P N p h o to tra n s is to r in a m o ld e d p la stic h o u s in g . A s lo t in th e h o u s in g betw een th e e m itte r

TMC57253

Contextual Info: TC254P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost Color TV Applications 324 H x 243(V) Active Elements in Image

TMC57253

Abstract: ccd color Linear Image Sensor TC254P TMC57750 CM500 BY121 SRG-10 serial register ABG CHIP TRANSISTOR TOPPAN BARRIER
Contextual Info: TC254P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost Color TV Applications 324 H x 243(V) Active Elements in Image

ITC117

Contextual Info: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P The Integrated Telecom Circuit series combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications. FEATURES

IRU1205

Abstract: IRU1205-18 IRU1205-18CL IRU1205-25 IRU1205-28 IRU1205-30 IRU1205-33 IRU1205-36 IRU1205CL AT30
Contextual Info: Data Sheet No. PD94133 IRU1205 IRU1205-18 / IRU1205-25 / IRU1205-28 IRU1205-30 / IRU1205-33 / IRU1205-36 300mA ULTRA LOW DROPOUT POSITIVE ADJUSTABLE AND FIXED REGULATORS DESCRIPTION FEATURES SOT-23 Package Stable with 2.2mF Ceramic Capacitor 1% Voltage Reference Accuracy

Contextual Info: AVANTEK INC Q 4ME D ^ J ^ N T E B C lm n b b GGOTU? =i B A V A ^ UTO/UTC 504 Series Thln-Fllm Cascadable Amplifier a «0 5 0 . MHZ FEATURES APPLICATIONS • Frequency Range: 5 to 500 MHz • High Output Power: +21.0 dBm Typ • Temperature Compensated • 24-Volt Supply

2SK324

Abstract: f664
Contextual Info: TOSHIBA {DISCRETE/OPTO} ^ ß F I ^ D i T a S D 9097250 TOSHIBA DISCRETE/OPTO {/asìùhi D D l b b m 99D f6641 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 3 2 4 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in m m

ABG CHIP TRANSISTOR

Abstract: CCD IMAGE TC255P TMC57253 ABG TRANSISTOR ccd image sensor SN761210 SN761210FR TMC57253DSB TMC57750
Contextual Info: TC255P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS057 – JUNE 1996 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost B/W TV Applications 324 H x 243(V) Active Elements in Image Sensing Area 10-µm Square Pixels