FT57 Search Results

FT5754M

Abstract: FT5754 FT5754M Pin FT5757M FT5757 T-43-25 FT57 B-500 diode
Contextual Info: FUJITSU MICROELECTRONICS 31E D 374*i7b2 GOlbbbM 3 E l F ill January 1990 Edition 1.1 FTS7S4M, FT5757M FUJITSU PRODUCT PRO FILE- Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS Rating Ta = 25°C Symbol Condition Value Unit -5 5 ~ +150 °C

Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5786M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Ta = 25°C Sym bol Value C onditions U n it NPN Storage Tem perature T s Junction Tem perature Ti Collector to Base Voltage

Contextual Info: Master Catalog FT5702 Series Industrial 2-port RS232/422/485 Self-Healing Ring Fiber Modem Value Wide Temp Self-Healing Ring offers the reliability of uninterrupted serial to Ethernet communications Easy and reliable solution for bridging your serial based

FT5778M

Abstract: T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array
Contextual Info: FUJITSU MICRO ELE CTRONICS 31E D E3 374=57^2 DOlbbTD M EIFMI cO '-<v January 1990 Edition 1.1 . — r-".-: —— PRODUCT PROFILE FT5778M Silicon Darlington Transistor Array ABSOLUTE M AXIMUM RATINGS Rating lT a = 2 5°C V alue C o n d itio n s Sy m b o l

FT5761M

Abstract: ft5761
Contextual Info: January 1990 Edition 1.1 FUJITSU PR O D U C T P R O FILE FT5761M Silicon Darlington Transistor Array FT5761M ABSOLUTE M AXIMUM RATINGS Rating Ta = 25°C C o ndition Sym bol Storage Tem perature T stg Ju n ctio n Temperature Value U n it -5 5 ~ +150 °C T¡

FT5760M

Abstract: TRANSISTOR A-318
Contextual Info: January 1990 Edition 1.1 — FUJITSU P R O D U C T PR O FILE FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ Rating Ta = 25°C C o ndition Sym bol Storage Tem perature T« 0 Jun ctio n Tem perature T¡ C ollector to Base Voltage

FT5763M

Abstract: FT5763 5766M plji VF100
Contextual Info: FT5763M 5766M ì * n » T Ä G O R L 'U H a t « « B ü ñ * P 4 S 3 - P I W * Ç «ÍH V •u e * K 3 V Ï f • K X I S — X ; y * • K - X « ft 3 k ,7 * -X- -,.7 a5 3 b ? t c A ■ ^ a «-• 150 -5S—♦ISO •150 4 150 Veto t*T * •< * f ■r -

Contextual Info: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE - FT5776M Silicon Darlington Transistor Array A BSO LU TE MAXIMUM RATINGS <Ta = 2 5 ° C V a lu e R a tin g Sym bol C o n d it io n s U n it N PN Sto ra g e T e m p e ra tu re ^stg J u n c t io n T e m p e r a t u r e

Fujitsu Silicon Darlington Transistor Array

Abstract: FT5787M
Contextual Info: January 1990 Edition 1.1 FUJITSU = PRODUCT PROFILE FT5787M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I V a lu e R a tin g Sym bol C o n d itio n s U n it NP N S to ra g e T e m p e ra tu re J u n c tio n T e m p e ra tu re

FT5777M

Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5777M Silicon Darlington Transistor Array A BSO LUTE M AXIM UM RATING S Ta = 25°C Sym b o l V alue Conditions U nit N PN Strage? Tem perature Tstg PN P -50 ~- +150 °C + 150 °C Ju n c tio n Tem perature

ft5764m

Abstract: FT5764 Fujitsu Silicon Darlington Transistor Array
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. FT5764M, FT5767M Silicon Darlington Transistor Array ABSO LUTE MAXIMUM RATINGS R a tin g {T a = 2 5 ° C Sym bol S to ra g e T e m p e ra tu re C o n d itio n V a lu e -55 T *tS J u n c t io n T e m p e ra tu re

FT5754M

Abstract: FT5754 FT5757M FT5754M Pin ft5757
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE' FT5754M, FT5757M Silicon Darlington Transistor Array ABSO LUTE MAXIMUM RATINGS Ta Rating Symbol Condition = 25aC Value Unit

FT5753M

Abstract: ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array
Contextual Info: January 1990 Edition 1.1 FT5753M, FT5756M FUJITSU - P R O D U C T P R O F IL E Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ R a tin g Ta = 2 5 °C S ym bol S to ra g e T e m p e ra tu re C o n d itio n T *9 J u n c tio n T e m p e ra tu re

FT5761M

Abstract: FT5761 B3 transistor
Contextual Info: FT5761M IL08 DARLINGTON TRANSISTOR ARRAY —SIDE VIEW— 2 1 3 4 4 5 6 7 8 9 10 11 12 C1 E1 C2 B2 E2 E3 B3 C3 E4 6 B4 3 C4 2 B1 5 1 9 8 COLLECTOR 7 BASE 11 12 EMITTER 10

FT5760M

Abstract: Fujitsu Silicon Darlington Transistor Array FT5760
Contextual Info: FUJITSU MIC RO ELE CTRONICS 31E D □ 374=î?b2 D01bb70 *1 E3FMI January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM U M RATINGS Ta = 2 5 C Sym b o l Rating C o n d itio n V alue U n it - 5 5 ~ +150

FT5755M

Abstract: FT5758M T-43-25 ft5758m DARLINGTON TRANSISTOR ARRAY FT5758 Fujitsu Silicon Darlington Transistor Array
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 3 7 4 ci7b5 DDlbbbb 7 B I F M I 'T ' January 1990 Edition 1.1 Füjfrsu PRODUCT P R O FILE- FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Rating Ta s 25 C Symbol Condition Value Unit -5 5 ~ +150

FT5714M

Abstract: FT5723M FT5712M FT5701AM FT5713M FT5702M FT5709M FN3L4Z ft5714 fp1f
Contextual Info: - 310 - m Ta=25tX *EP(iTc=25‘C M FN1L3Z FN1L4L FN1L4M FN1L4Z FN2A3Q FN2A4M FN2A4P FN2A4Z FN2F4M FN2F4N FN2F4Z FN2L3M FN2L3N FN2L3Z FN2L4L FN2L4M FN2L4Z FN3L4Z FP1A3M FP1A4A FP1A4M FP1F3P FP1J3P FP1L2Q FP1L3N FT3352 FT3553 FT3883 FT5701AM FT5702M FT5709M

FT5769M

Abstract: ft5769
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5769M Silicon Darlington Transistor Array A BSO LUTE MAXIMUM RATINGS R a tin g T a = 2 5 ° C Sym bol C o n d itio n V a lu e Cc T «9 J u n c t io n T e m p e ra tu re Ti +150 °C C o lle c to r to Base V o lta g e

FT5758M

Abstract: FT5755M FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY
Contextual Info: Januar/ 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I R a tin g S ym bol S to ra g e T e m p e ra tu re T«g J u n c tio n T e m p e ra tu re T¡ C o n d itio n U n it

Contextual Info: FT5747M Transistors Common Emitter Transistor Array Number of Devices5 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15

Contextual Info: NPN X t í^ + S / t Jb 7 b - t S ! FT5713M -~ ~ ' _ r _ : mn ñ • 4 * i v i / < » v - y 1« I l l ì 1! IO 9 8 Í L Iff! & ^ «e3/^*im •) U - K 9 V I / y - f K p o t ì n m n n y c H ü n n y c u I 7 3 4 5 (7 INDEX , | r i ìli 7.1 -f 7

FT5754M

Abstract: FT5753M FT5769M FT5758ML FT5758M FT5763M ft5748m FT5764M FT5760M FT5761M
Contextual Info: - 312 - m % m Ta=25T , *EP(äTc=25<C ) tt m a & '•CEO (V) FT5747M HV SW/HF A (V) ici D O (A) Pc (W) Pc* (W) iCBO^ (max) lu A) V'CB .faE (max) (min) (V) «# tt Vc e (V) (Ta=25T;) [*EP(ätyp{Ü] . / (max) (V) Ic /’ Ie (A) \ t. / \ (V) le (A) -250 -250

FT5753M

Abstract: FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array
Contextual Info: FUJITSU MI CR OELECTRON ICS 31E » E3 0Qlbbb2 T Q F M I T '-'iZ 'O .s r January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ FT5753M, FT5756M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Ta » 25° C Symbol Rating Storage Temperature T «9 Junction Temperature

FT5764M

Abstract: FT5764 ft5767m FT57 T-43-25
Contextual Info: FUJITSU MICROELECTRONICS 31E » E3 3 7 4 ^ 2 ODlbbTb T BiFMI Cp January 1990 Edition 1.1 T'-M'IS' FUJITSU PRODUCT PROFILE'- FT5764M, FT5767M Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS {Ta = 25° C Sym b o l Rating Storage Temperature