FT5760M
Abstract: TRANSISTOR A-318
Contextual Info: January 1990 Edition 1.1 — FUJITSU P R O D U C T PR O FILE FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ Rating Ta = 25°C C o ndition Sym bol Storage Tem perature T« 0 Jun ctio n Tem perature T¡ C ollector to Base Voltage
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FT5760M
Abstract: Fujitsu Silicon Darlington Transistor Array FT5760
Contextual Info: FUJITSU MIC RO ELE CTRONICS 31E D □ 374=î?b2 D01bb70 *1 E3FMI January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM U M RATINGS Ta = 2 5 C Sym b o l Rating C o n d itio n V alue U n it - 5 5 ~ +150
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FT5753M
Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M
Contextual Info: Darlington Transistor Arrays Power Transistor Products INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays. Each array consists o f 4-D arlin gton Transistors. T h e array is packaged in a small plastic 12-pin single in-line package w ith or
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12-pinft5753mft5754mft5764m+7ft5778mft5769mft5754m pinft5758mft5755md5 transistor npnft5763m
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FT5754M
Abstract: FT5753M FT5769M FT5758ML FT5758M FT5763M ft5748m FT5764M FT5760M FT5761M
Contextual Info: - 312 - m % m Ta=25T , *EP(äTc=25<C ) tt m a & '•CEO (V) FT5747M HV SW/HF A (V) ici D O (A) Pc (W) Pc* (W) iCBO^ (max) lu A) V'CB .faE (max) (min) (V) «# tt Vc e (V) (Ta=25T;) [*EP(ätyp{Ü] . / (max) (V) Ic /’ Ie (A) \ t. / \ (V) le (A) -250 -250
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FT5769M
Abstract: NPN 337 FT5764M FT5755M FT5753M FT5756M ft5760m PNP DARLINGTON ARRAYS FT5754 FT5754M
Contextual Info: Section 3 Darlington Transistor Arrays — A t a Glance Maximum Ratings V c e o V lc(A> Pag« D *v lC * C aa«(n«) Polarity 3 -9 FT5753M FT5756M R M -£ 5 NPN NPN 100 100 ±1.5 ±1-5 3-11 FT5754M FT5757M R M -6 5 NPN NPN 100 100 ±3 ±3 3-13 FT5755M FT5750M
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