TRANSISTOR HV Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

diode gp 429

Abstract: HV400
Contextual Info: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty

Radar

Abstract: diode gp 429 HV400
Contextual Info: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Radar

Abstract: diode gp 429 HV400 hvvi transistor 1150
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

NI-400

Abstract: diode gp 429 HV400
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

c1028 transistor

Abstract: c1028
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor

HVV0912-450

Abstract: diode gp 429 TACAN
Contextual Info: HVV0912-450 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulsewidth, 10% Duty Cycle For Ground DME/TACAN Applications DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor

C1028

Abstract: c1028 transistor
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor

transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Contextual Info: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor

HVV1011-600

Abstract: hvvi 1090MHZ
Contextual Info: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor

Contextual Info: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.

HVV1012-550

Abstract: 4884 12W 01 TRANSISTOR hvvi
Contextual Info: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed

500W TRANSISTOR

Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Contextual Info: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor

HV400

Abstract: 1030 mhz interrogator 1030 PULSED
Contextual Info: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor

HVV1011-1000L

Abstract: transistor 1000W 1000w power supply 1030 PULSED
Contextual Info: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor

HVVi Semiconductors

Abstract: SM200
Contextual Info: HVV1214-025 L-Band High Power Pulsed Transistor 1200-1400MHz, 200µs, 10% Duty For Ground Based Radar Applications DESCRIPTION PACKAGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications

150w darlington transistor to3 package

Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
Contextual Info: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly