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    TRANSISTOR HEMT GAS Search Results

    TRANSISTOR HEMT GAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR HEMT GAS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    low noise hemt

    Abstract: low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
    Contextual Info: EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		EC2623 12GHz EC2623 BMH204 12GHz DSEC26237003 low noise hemt low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS PDF

    HEMT 36 ghz transistor

    Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
    Contextual Info: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor PDF

    FHX35LG

    Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
    Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die PDF

    FHX35

    Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
    Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet PDF

    transistor 1345

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips
    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips PDF

    FHX02X

    Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt PDF

    GaAs FET HEMT Chips

    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips PDF

    FHR02X

    Abstract: FHX02X GaAs FET HEMT Chips
    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips PDF

    high power FET transistor s-parameters

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 high power FET transistor s-parameters FHR02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip PDF

    GaAs FET HEMT Chips

    Abstract: FHX35X high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35
    Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 GaAs FET HEMT Chips high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35 PDF

    GaAs FET HEMT Chips

    Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor
    Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz Pow4888 GaAs FET HEMT Chips FHX35 eudyna GaAs FET RF Transistor PDF

    high frequency transistor ga as fet

    Abstract: GaAs FET HEMT Chips fujitsu hemt
    Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt PDF

    Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz PDF

    fujitsu hemt

    Abstract: FHX35X rm 702 627
    Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz Power4888 fujitsu hemt rm 702 627 PDF

    FHR02FH

    Abstract: fujitsu hemt
    Contextual Info: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


    Original     		FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt PDF

    CF001-03

    Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
    Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original     		03-Apr-08 CF001-03 CF001-03 MIL-STD-750 CF001-03-000X CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001 PDF

    Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original     		03-Apr-08 CF001-03 CF001-03 MIL-STD-750 comm-000X PDF

    pseudomorphic HEMT

    Abstract: CF003-03 Hemt transistor
    Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,


    Original     		19-Jul-08 CF003-03 CF003-03 CF003-03-000X pseudomorphic HEMT Hemt transistor PDF

    Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,


    Original     		19-Jul-08 CF003-03 CF003-03 for-000X PDF

    FHR20X

    Abstract: GaAs FET HEMT Chips 0840 057 TM 1628
    Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ≤ 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor


    Original     		FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200 GaAs FET HEMT Chips 0840 057 TM 1628 PDF

    Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ² 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor


    Original     		FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200 PDF

    FHX45X

    Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
    Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		FHX45X 12GHz FHX45X 2-18GHz high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt PDF

    Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		FHX13X, FHX14X 12GHz FHX13) FHX14X 2-18GHz PDF

    FHX45X

    Abstract: GaAs FET HEMT Chips GaAs FET chip
    Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		FHX45X 12GHz FHX45X 2-18GHz GaAs FET HEMT Chips GaAs FET chip PDF