EC2827 Search Results

HEMT 36 ghz transistor

Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
Contextual Info: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with

super bonder 325

Abstract: ls40f
Contextual Info: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz

Contextual Info: EC2827 PRELIM INARY INFORM ATION 4 0 G H z S U P E R LOW NO I SE HE MT A I G a A s / G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • 1.0dB m inim um noise figure @ 1 8 G H z • 2.0dB m inim um noise figure @ 40 G H z • 1 1dB asso cia ted gain @ 18G H z

Contextual Info: FETs INDEX LOW NOISE FETs ♦ EC1840 - 40GHz LOW NOISE FE T . 85 NEW ♦ EC2623/TC2623 - 12GHz SUPER LOW NOISE H E M T.95 NEW ♦ EC2827 - 40GHz SUPER LOW NOISE H E M T . 99

AH512

Abstract: AH513 AH514 ah503 AH370 AH681 AH610 ah496 AH-512 AH374
Contextual Info: A LP H A N U ME RI CA L PRODUCT INDEX P/N ADC20010 Page P/N Page P/N Page 259 AH228 35 AH458 AFC378 55 AH229 35 AH479 17 AFC500 AH 152 43 35 35 AH480 17 29 AH230 AH232 AH 153 29 AH 154 35 35 AH155 29 29 AH233 AH234 AH235 35 AH156 29 35 AH157 29 AH236 AH237