TRANSISTOR H6C Search Results

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

transistor H6C

Contextual Info: TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 IC = 0.2 A

transistor H6C

Abstract: TPC6902
Contextual Info: TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 IC = 0.2 A

transistor 6c9

Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Contextual Info: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A

Contextual Info: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U฀ DK:GH฀;><IF:฀D;฀B:F>H฀/,+฀L฀.X U฀2AHF6฀ADK฀<6H:฀8=6F<: V !0฀8M[^Rh .) O R =L"`_#%^Rh )',.)  *2 _< Q X%dia U฀"LHF:B:฀9J 9H฀F6H:9 U฀%><=฀E:6@฀8IFF:CH฀86E67>A>HM

marking 9D

Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

9926C

Abstract: IPI037N06L3 s4si IPP037N06L3 G
Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(

IPP05CN10N

Contextual Info: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

marking 6d

Abstract: IPD110N12N3 G
Contextual Info: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E

IPD110N12N3 G

Contextual Info: IPD110N12N3 G IPS110N12N3 G TM3Power-Transistor Features Product Summary R฀ 492?6=฀?@C>2=฀=6G6= V ;I *( K R ;I"\[#$>2I฀ ) Z I; /- 7 R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀!)' R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#

marking J6c

Abstract: marking 6C marking 09D marking 6c 7
Contextual Info: IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I 0- K R  - @ ?>2 I.)     0&* Z" I; 1- 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

IPB230N06L3

Abstract: IPP230N06L3 G s4si
Contextual Info: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

IPP037N06L3 G

Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G  3 Power-Transistor Product Summary Features V 9I . K R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R -@?>2I฀-' +&, Z R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD

DIODE 5c2 5t

Contextual Info: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G  3 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )*( K R -@?>2I฀ ),&/ Z I; -. 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#

Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' 0&) Z I9 -( 6

marking xd diode

Abstract: e866 marking 8fc marking J6c s4si
Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K 0&) Z" -( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

Contextual Info: IPB04CN10N G IPI04CN10N G IPP04CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ +&1 Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs