IPB051NE8N Search Results
IPB051NE8N Datasheets (1)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB051NE8NG | Infineon Technologies | OptiMOS 2 Power-Transistor | Original | 471.16KB | 11 |
IPB051NE8N Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB051NE8NGATMA1IPB051NE8NGATMA1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB051NE8NGATMA1 | 775 | 210 |
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IPB051NE8NGATMA1 | 775 | 1 |
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Infineon Technologies AG IPB051NE8NGPower Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB051NE8NG | 11,628 |
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