TRANSISTOR H03 Search Results

D 1413 transistor

Abstract: transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03
Contextual Info: Surface Mount Transistor Arrays SD Series PNP darlington transistor array SDA01 -6 0 15.16 13 .1 4 11.12 Fh : 4 kU typ 15,16 SDC01 in I R 2 J l OOütyp 13^14 3 -. 9, 10 |_ 11.12 5o f . ( — 2.5A pulse) 2000 to 12000 — 1.4 max o Relays 0 S olenoids j 9, 10

03n60

Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

2SC3616

Abstract: PA33 ScansUX881
Contextual Info: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA

KTD2058 Y

Abstract: KTD2058 KTB1366
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE sat =1.0V(Max.) (Ic=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

18 PIN DIAGRAM LM3914

Abstract: digital lm3914 6685a lm35 lm3914 circuits LM3914 applications TMAX T7S LM3914 LM3914 data sheet LM3914 PIN DESCRIPTION lm35 interfacing
Contextual Info: LM34/LM34A/LM34C/LM34CA/LM34D tßN a t i o n a l Semiconductor LM34/LM34A/LM34C/LM34CA/LM34D Precision Fahrenheit Temperature Sensors G eneral Description while the LM34C, LM34CA and LM34D are also available in the plastic TO-92 transistor package. The LM34D is also

2216

Abstract: 2SC2216 2SC2717
Contextual Info: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)

2SK389

Abstract: 052-DB 2SJ109
Contextual Info: TO SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| =20m S Typ.

SC-59

Abstract: k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522 MUN2211
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA

k2647

Abstract: SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA

transistor 1127

Abstract: transistor 2sk2961
Contextual Info: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

Contextual Info: B Transistor Arrays SD Type No. 2 Ri R 20 4 ' *f 1 S D A 01 Voltage Ratings <V) Equivalent Circuit t * r 6 ' „-T . 3* r * ; r r Vce(Mi' and other Functions/Appiications (V) P N P D a rlin g to n tra n s is to r a rra y i '• 13)14 hFE and other 8 1 „* 1*

electroluminescent display

Abstract: EL FLAT PANEL opto counter HV577 HV623 HV70
Contextual Info: AN-H03 Application Note Basics of EL Panel Drive Techniques Thin film electroluminescent EL panels operate on the principle of successive pulses of opposite polarity. These pulses must exceed a threshold of approximately 200V for the panel to emit light.

LM395 spice

Abstract: LM195 RETS195K DS006009 LM395T A-083081-2
Contextual Info: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

2tph03p

Abstract: IEC584 IEC584-1 omron ct E54-CT1 PT100 Platinum Resistance Temperature Detector H113
Contextual Info: Modular Temperature Controller E5ZN CSM_E5ZN_DS_E_2_1 New DIN Track Mounting Temperature Controller • Two channels of temperature control available despite width of only 22.5 mm. • The Temperature Controller itself can be replaced without changing terminal wiring.

IEC584-1

Abstract: H113 10A250VAC omron P2CF-11 2tph03p Lambda Sensor omron ct E54-CT1 PT100 Platinum Resistance Temperature Detector E53-COV13 F03F
Contextual Info: Modular Temperature Controller E5ZN CSM_E5ZN_DS_E_3_1 New DIN Track Mounting Temperature Controller • Two channels of temperature control available despite width of only 22.5 mm. • The Temperature Controller itself can be replaced without changing terminal wiring.

LM317HV

Abstract: LM317HVH LM317HVK LM317HVT LM117HV LM117HVK LM317HVK STEEL RETS117HVK LM317HVK-STEEL LM117HVH
Contextual Info: General Description The LM117HV/LM317HV are adjustable 3-terminal positive voltage regulators capable of supplying in excess of 1.5A over a 1.2V to 57V output range. They are exceptionally easy to use and require only two external resistors to set the output voltage. Further, both line and load regulation are better than standard fixed regulators. Also, the LM117HV is

LM395

Abstract: voltage follower schematic A083 LM195 LP395 LM195 National lm395t schematic diagram ac power regulator
Contextual Info: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy

LM395 datasheet

Abstract: LM195 National LM195 k02a LM395 LM395T LP395 voltage regulators 10 amp to3 voltage follower schematic R1C shunt regulator
Contextual Info: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy

LM395K

Abstract: LM395H LM395T LM295 LM196 LM395P 2N2905 LM195 LM295H LM295K
Contextual Info: LM195/LM295/LM395 Ultra Reliable Power Transistors General Description The LM195/LM295/LM395 are fast, monolithic power tran­ sistors with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy

LM395T

Abstract: LM395 datasheet A-083081-2 R1C shunt regulator crowbar k02a LM195 National voltage follower schematic LM195 LM395
Contextual Info: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power transistors with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy from any