2SK389 Search Results

smd transistor ISS

Abstract: 2SK3899 2SK38
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2

Contextual Info: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2

2SK389BL

Contextual Info: 2SK389BL Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2SK389

Abstract: 2SJ109
Contextual Info: TO SH IBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

UNION CARBIDE

Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply • Package

amelco

Abstract: LSK389B
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE Top View TO-71 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

2SK389 equivalent

Abstract: 2SK389
Contextual Info: T O SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

2SK3899

Abstract: 2SK3899-ZK 2SK38 D1717
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3899-ZK TO-263 MP-25ZK

acoustic sensor

Abstract: 2SK389 LSK389 ultra low idss toshiba jfet dual jfet jfets
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a monolithic matched dual JFET on a single chip Why use On-Chip Dual JFET instead of 2 single JFETS? Save Cost 2SK389 / LSK389 removes significant cost for test screening time

2SK389

Abstract: 2-10M1A 2SJ109 1G100
Contextual Info: TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

2SK3891

Abstract: 700v 5A mosfet DC converter 50A 100V 2SK3891-01R mosfet 600V 50A
Contextual Info: 2SK3891-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: LSK389 ULTRA LOW NOISE DUAL N-CHANNEL J-FET Replace discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a 1nV/√Hz single chip dual JFET Why use monolithic dual JFET instead of 2 single JFETS? 2SK389 / LSK389 removes significant cost for test screening time needed to match IDSS on 2 individual

K3892

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For high-speed switching 4.6±0.2 9.9±0.3 Rating Unit Drain-source surrender voltage VDSS 200 V Gate-source surrender voltage VGSS ±30 V Drain current

2SK389

Abstract: 2SJ109 2-10M1A
Contextual Info: TO SH IB A 2SK389 T O SH IBA D U A L FIELD EFFECT T RA N SIST O R SILICON M O N O LITH IC N C H A N N EL JU N C TIO N TYPE 2SK389 L O W NOISE A U D IO A N D D IFFER EN TIA L A M P L IF IE R APPLICA TIO N S. U n it in mm 1 C h ip D u a l Type. 9.5 + 0 3 Recom m ended fo r F ir s t D iffe re n tia l Stag es of D C A m p lifie rs.

2SK389 equivalent

Abstract: 2SK389
Contextual Info: TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High ¡Yfsj : ¡Yfs| = 20mS Typ.

2SK389 equivalent

Abstract: LSK389 equivalent LSK389B 2sk389 LSK170A LSK389A 2SK389C ultra low igss pA
Contextual Info: LSK389 ULTRA LOW NOISE DUAL N-CHANNEL J-FET Replace discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a 1nV/√Hz single chip dual JFET Why use monolithic dual JFET instead of 2 single JFETS? 2SK389 / LSK389 removes significant cost for test screening time needed to match IDSS on 2 individual

2SK389

Abstract: 052-DB 2SJ109
Contextual Info: TO SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| =20m S Typ.

Contextual Info: 2SK389GR Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid