LSK170A Search Results

replacement 2sk170

Abstract: lsk170 2sk170 lsk389
Contextual Info: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to

2SK170

Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
Contextual Info: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to

lsk389

Abstract: lsk170a LSK170C
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE f=1kHz en = 0.9NV/√HZ HIGH BREAKDOWN VOLTAGE BVGSS=40V max HIGH GAIN Yfs=22mS (typ) HIGH INPUT IMPEDENCE IG= -500pA max LOW CAPACITANCE 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170

Contextual Info: LSK389 ULTRA LOW NOISE DUAL N-CHANNEL J-FET Replace discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a 1nV/√Hz single chip dual JFET Why use monolithic dual JFET instead of 2 single JFETS? 2SK389 / LSK389 removes significant cost for test screening time needed to match IDSS on 2 individual

lsk170

Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE f=1kHz en = 0.9NV/√HZ HIGH BREAKDOWN VOLTAGE BVGSS=40V max HIGH GAIN Yfs=22mS (typ) HIGH INPUT IMPEDENCE IG= -500pA max LOW CAPACITANCE 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170

LSK170A

Abstract: LSK170 LSK170C LSK170B replacement 2sk170 2SK170 2SK170 to92 LSK389 equivalent n-channel JFET sot23 jfet n channel ultra low noise
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170

replacement 2sk170

Abstract: LSK170C negative clipper LSK389 equivalent lsk389 LSK170B
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE f=1kHz en = 0.9NV/√HZ HIGH BREAKDOWN VOLTAGE BVGSS=40V max HIGH GAIN Yfs=22mS (typ) HIGH INPUT IMPEDENCE IG= -500pA max LOW CAPACITANCE SOT-23 TOP VIEW TO-92 TOP VIEW 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170

2SK389 equivalent

Abstract: LSK389 equivalent LSK389B 2sk389 LSK170A LSK389A 2SK389C ultra low igss pA
Contextual Info: LSK389 ULTRA LOW NOISE DUAL N-CHANNEL J-FET Replace discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a 1nV/√Hz single chip dual JFET Why use monolithic dual JFET instead of 2 single JFETS? 2SK389 / LSK389 removes significant cost for test screening time needed to match IDSS on 2 individual

2sk170 spice

Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170