TRANSISTOR GY 123 Search Results

SGS ISOWATT221

Abstract: STP3N50XI D556 ISOWATT221
Contextual Info: • OOMLilbb MÖ7 ■ S G T H _ _ rz7 sgs-ihomson Ä T f «[R3 M £Tr^MD S STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N50XI ■ . . ■ . Vdss RDS(on 500 V <4 n Id 1.7 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TEC HNO LO GY

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

UA30CLD35NPTR

Contextual Info: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable

ECG116

Abstract: ECG1287 ECG128 GV-30
Contextual Info: PHILIPS E C G INC 17E D • bbS3=iaô □ □□‘tfiflQ S s ' EGG ECG1287 Audio Power Amplifier S e m ic o n d u c to rs Features • Short circuit protection • Thermal shutdown 14 13 12 II 10 9 8 r i i —i n n i —n i l — . ,280" 7.ll MAX. i 1 2

diode BY 226

Abstract: QRC1113 diode 226 ST2178
Contextual Info: L5 0 p > n-r,r, » ^ , n , r j REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRC1113 DESCRIPTION PACKAGE DIMENSIONS .420 10.67 -» — .328 (8.33) (A ), .062 R NOM (K) .226 (5.74) i c - (E) (C ) f ^ .150 (3.81) .150 (3.81) NOM POINT OF OPTIMUM RESPONSE

Contextual Info: RF3375 I MICRO-DEVICES G E N E R A L P U R P O S E A M P L IF IE R • Basestation Applications Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks Final PA for Low-Power Applications • IF or RF Buffer Amplifiers High Reliability Applications

SMD transistor UY

Abstract: smd optocoupler cop 200 transistor irf 630 transistor smd CR gy 615 smd 152,GY CR50TEA dual led 660 940 red infrared smd transistor GY smd rgb
Contextual Info: LIGHT EMITTING CHARACTERISTICS ELCOS GmbH, well known as the first manufacturer of SMD components in Optoelectronics, has now completed it’s portfolio from the smallest single colour-package the CERLED onto the “semicustom” multichip package (the EUROLED). Regarding Standard Products the policy of ceramic substrates and moulded encapsulation gave the

VTBN6GRQ

Contextual Info: VTB Pick-to-Light Optical Touch Button Ergonomic optical touch button for pick-to-light applications • Microcontroller-based photoelectric touch buttons • A cost-effective and easy-to-install alternative to capacitive touch switches and mechanical push buttons for errorproofing and parts-verification applications

wiring diagram to hold contactor with NO, NC

Abstract: UA30CLD35NPTR UA30CLD sp 1235 UA18CLD20PPTR UA18CLD05NPM1TR UA18CLD05NPTR UA18CL UA18CLD05PPTR UA18CLD08NPM1TR
Contextual Info: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable

c104 TRANSISTOR

Abstract: c102 TRANSISTOR TRANSISTOR c104 HA1306W c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 HA1306 transistor c106 TRANSISTOR C103
Contextual Info: HA1306W 3.5W AUDIO POWER AMPLIFIER • FE A TU R E S • SRPP Circuit Shunt-regulated Push-Pull Circuit High Operating Stability on DC and AC • High Voltage Gain . 44dB typ. • Low Thermal Resistance. 1I0°C/W (maximum)

Halbleiterbauelemente DDR

Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Contextual Info: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.

TA7698AP

Abstract: ta7698 gl 40-2t ekp 71 R407C toshiba chroma television
Contextual Info: -'-Vv."- v i d e o - c h r o m a -d e f l e c t i o n Unit: mm system FOR A COLOR TELEVISION PAL, NTSC The TA7698AP combines a PAL/NTSC VideoChroma subsystem and a Deflection combination on a single monolithic integrated circuit to provide a PAL or PAL/NTSC color television.

2N6679

Abstract: transistor GY 123
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N6679 NPN S ilic o n High Fre q u e n cy T ra n sisto r . . . designed fo r use in h igh-frequency, sm all-sign a l, n a rro w and w id e b a n d a m p lifie rs. Ideal fo r use in m ic ro s trip th in and th ick film applications.

TRANSISTOR gy 740

Abstract: transistor AD 829
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT MPSA56 PNP general purpose transistor Product specification Supersedes data of 1998 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor MPSA56 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor

APT45G100BN

Contextual Info: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 0*1 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y * APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

TDA3562A

Contextual Info: INTEGRATED CIRCUITS TDA3566A PAL/NTSC decoder Product specification Supersedes data of March 1991 File under Integrated Circuits, IC02 February 1994 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PAL/NTSC decoder TDA3566A

Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification

PC5004

Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Contextual Info: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

AGP 9805

Abstract: transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Jan 08 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1997 Oct 14 PHILIPS Philips Semiconductors Product specification