2N6679 Search Results

2N6679

Abstract: HPAC-100 HPAC HXTR-2101
Contextual Info: COMPONENTS 2N6679 HXTR-2101 Features HIGH GAIN 10.5 dB Typical at 4 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE BIPOLAR TRANSISTORS GENERAL PURPOSE TRANSISTOR H E W L E T T P AC KARD G Description The 2N6679 (HXTR-2101) is an NPN bipolar transistor designed fo r high gain and o utp ut power at 4 GHz. The

Contextual Info: m 2N6679 \ \ SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 02,65 m ax - s :!'4" '- MAXIMUM RATINGS 1,1 lc 70 mA V ce 20 V P diss 900 mW @ Tc = 87 °C

2N6679

Abstract: sot100 70MA20 SOT-100
Contextual Info: 2N6679 SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 70 mA 20 V P d is s 900 mW @ Te %87 0C o Ie < m MAXIMUM RATINGS Tj -65 °C to +200 0C Tstg -65 0C to +200 0C

2N6679

Abstract: transistor GY 123
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N6679 NPN S ilic o n High Fre q u e n cy T ra n sisto r . . . designed fo r use in h igh-frequency, sm all-sign a l, n a rro w and w id e b a n d a m p lifie rs. Ideal fo r use in m ic ro s trip th in and th ick film applications.

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

PT 2102 ic

Abstract: 2N6679 HXTR-2101TXV HXTR-4101 HPAC-70GT HXTR-6106 6105T HXTR-2101 HXTR-6105 HXTR-2001
Contextual Info: HEWLETT-PACKARD-. CMPNTS EOE t C3 M4M7SflM 0005512 2 □ 181 t S S ä S General Purpose Transistors HXTR-2001 Chip Technical Data • High Gain 11 dB Typical at 4 GHz • Low Noise Figure 3.8 dB Typical at 4 GHz • High O utput Pow er 20 dBm Typical PldB at

PT 2102 ic

Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003
Contextual Info: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under