TRANSISTOR GC Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

AN3025

Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Contextual Info: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace

Contextual Info: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current

IGBT/MOSFET Gate Drive

Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
Contextual Info: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2SC2352

Abstract: z239
Contextual Info: NEC SILICON TRANSISTOR BfCTRON OEVKE 2SC2352 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2352 is an NPN silicon epitaxial transistor intended fo r use as a in millimeters inches V H F m ixer in a tun er o f a T V receiver.

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

BLW84

Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith­

K 3699 transistor

Abstract: BLY88A 3699 npn pscw
Contextual Info: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration

Contextual Info: BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED

Contextual Info: BUL49D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR

2N2894AC1

Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
Contextual Info: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

Contextual Info: BUL49D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR

2SC4548

Contextual Info: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity

Contextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS

mitsubishi vcb

Abstract: 2SC3443
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3443 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3443 is a silicon NPN epitaxial type transistor designed for small OUTLINE DRAWING Uni( type motor drive, power supply application.

Contextual Info: BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS . SWITCH MODE POWER SUPPLIES

BUL310

Contextual Info: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED

Contextual Info: BUL59 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS . SWITCH MODE POWER SUPPLIES

Contextual Info: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

Contextual Info: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available