TRANSISTOR DATABOOK Search Results

TRANSISTOR DATABOOK Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR DATABOOK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Application Notes Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit Contextual Info: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the	Original		PDF
12w 5d Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES	OCR Scan	2SC3629 2SC3629 520MHz, 12w 5d	PDF
RF POWER TRANSISTOR NPN Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC3628 175MHz 175MHz. RF POWER TRANSISTOR NPN mitsubishi RF POWER TRANSISTOR Mitsubishi databook T-46	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •	OCR Scan	2SC3628 2SC3628 175MHz 175MHz.	PDF
Mitsubishi transistor databook Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •	OCR Scan	2SC3022 2SC3022 520MHz, Mitsubishi transistor databook	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB	OCR Scan	2SC3379 2SC3379 520MHz,	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm	OCR Scan	2SC3629 2SC3629 520MHz,	PDF
package drawing T46 Abstract: 2SC3404 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 3404 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. C 1 .5 M A X D im e n s io n s in m m	OCR Scan	2SC3404 2SC3404 75MHz, 175MHz, package drawing T46 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw	PDF
Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm	OCR Scan	2SC3022 2SC3022 520MHz,	PDF
transistor databook Contextual Info: This Power Bipolar Transistor DATABOOK contains data on the range of the Company’s discrete BI POLAR POWER devices for applications in indu strial, automotive, computer, telecommunication, professional, and consumer equipment. Introduced for the first time are ETD transistors for	OCR Scan	ISOWATT220, ISOWATT218, transistor databook	PDF
2N5912 Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30 Contextual Info: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation	Original	2N5911, 2N5912 2N5911 NJ30L NJ36D SMP5911, SMP5912 2N5912 2N5911 B-23 SMP5911 SMP5912 NJ-30	PDF
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page iv iv 01/99 High-Reliability Process Flows I nterFET Corporation has served the military and industrial highreliability junction field effect transistor market since 1984. There are standard high-reliability processing options available on most	Original	MIL-STD-883, MIL-S-19500 dev006 PB-TS-EL01 PB-FT-0000 QB-IN-GN04	PDF

2N4221 Abstract: 2N4222A 2N4220 2N4220A 2N4221A 2N4222 2N4221 transistor NJ16 NJ32 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-10 B-10 01/99 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Mixers Oscillators VHF Amplifiers Small Signal Amplifiers	Original	2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A 2N4220 2N4220A 2N4221 2N4222A 2N4220 2N4220A 2N4221A 2N4222 2N4221 transistor NJ16 NJ32	PDF
transistor A3 F45 Abstract: transistor a4 f45 transistor A2 F45 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-44 F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor ¥ Ultra Low-Noise Pre-Amplifier D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ1800D transistor A3 F45 transistor a4 f45 transistor A2 F45	PDF
IFN6449 Abstract: IFN6450 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-48 B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current	Original	IFN6449, IFN6450 IFN6449 IFN6449 IFN6450	PDF
2N5460 Abstract: 2n5462 2N5461 transistor 2N5461 SMP5460 SMP5461 SMP5462 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-21 B-21 01/99 2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage	Original	2N5460, 2N5461, 2N5462 2N5460 226AA SMP5460, SMP5461, SMP5462 2N5460 2n5462 2N5461 transistor 2N5461 SMP5460 SMP5461 SMP5462	PDF
SMP5911 Abstract: SMP5912 Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage	Original	SMP5911, SMP5912 SMP5911 NJ30L SMP5911 SMP5912	PDF
2N5911 Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ30L 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 2N5911 2N5912 IFN5911 IFN5912 SMP5911 SMP5912	PDF
transistor F13 Abstract: transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ26L 2N5397, 2N5398 30ion transistor F13 transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212	PDF
2N3823 equivalent Abstract: transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-18 F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA	Original	2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A 2N3823 equivalent transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823	PDF
2N4341 Abstract: 2N4338 2N4339 2N4340 NJ16 SMP4340 SMP4341 to236AB 2n4338 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-11 B-11 01/99 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators	Original	2N4338, 2N4339 2N4338 2N4341 2N4338 2N4339 2N4340 NJ16 SMP4340 SMP4341 to236AB 2n4338	PDF
IF3601 Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current	Original	2N6449, 2N6450 2N6449 IF3601 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320	PDF

TRANSISTOR DATABOOK Search Results

TRANSISTOR DATABOOK Result Highlights (5)

TRANSISTOR DATABOOK Datasheets Context Search

Application Notes

12w 5d

RF POWER TRANSISTOR NPN

Mitsubishi transistor databook

LG color tv Circuit Diagram schematics

IC HXJ 2038

package drawing T46

transistor databook

2N5912

2N4221

transistor A3 F45

IFN6449

2N5460

SMP5911

2N5911

transistor F13

2N3823 equivalent

2N4341

IF3601