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Aratas Corporation WLNJ30LDN - Bulk (Alt: WLNJ30LDN)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	WLNJ30LDN	Bulk		7 Weeks	1	1 $166.38 10 $151.91 100 $136.24 1000 $136.24 10000 $136.24	Buy Now
Halo Electronics Inc TG10G-S105NJ30LFTR 10G SMD ISOLATION MODULE - Tape and Reel (Alt: TG10G-S105NJ30LFTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TG10G-S105NJ30LFTR	Tape & Reel		20 Weeks	300	1 - 10 - 100 - 1000 $6.37 10000 $6.28	Buy Now
Aratas Corporation WLNJ30LEN - Bulk (Alt: WLNJ30LEN)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	WLNJ30LEN	Bulk		14 Weeks	1	1 $160.61 10 $148.19 100 $147.43 1000 $147.43 10000 $147.43	Buy Now
Halo Electronics Inc TG10G-S105NJ30LF Telecom Transformer 10 GBase-T Single Port Isolation Transformer 1:1 1500Vrms 500Ohm Prim. 500Ohm Sec. SMD - Rail/Tube (Alt: TG10G-S105NJ30LF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TG10G-S105NJ30LF	Tube		20 Weeks	280	1 - 10 - 100 - 1000 $6.20 10000 $5.98	Buy Now
OMRON Industrial Automation WLNJ30LDN LIMIT SWITCH, COIL SPRING (SPRING DIAMETER: 4.8), BASIC, INDICATOR LED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	WLNJ30LDN	Bulk			1	1 $204.20 10 $204.20 100 $204.20 1000 $204.20 10000 $204.20	Get Quote
Master Electronics	WLNJ30LDN					1 $182.00 10 $182.00 100 $182.00 1000 $182.00 10000 $182.00	Buy Now

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NJ30L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5911 Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ30L 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 2N5911 2N5912 IFN5911 IFN5912 SMP5911 SMP5912	PDF
Contextual Info: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS	OCR Scan	IFN5911, IFN5912 FN5911 IFN9912 NJ30L 00G07b7	PDF
Contextual Info: B 64 9-97 SMP 5911, SMP 5912 m jÄTN ^H ÄN N ETsinCO N TÜ N CTlO N m ELD ^FFK^R^ • WIDEBAND DIFFERENTIAL AMPLIFIERS SMP5011 At 25 °C free air temperature: Min Static Electrical Characteristics Gate Source Breakdown Voltage V b r g s s Gate Reverse Current	OCR Scan	SMP5011 NJ30L SMP5912	PDF
2N6449 Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current	Original	2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116	PDF
IFN5912 Abstract: IFN5911 NJ-30 Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation	Original	IFN5911, IFN5912 IFN5911 IFN5912 IFN5911 NJ-30	PDF
2N5912 Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30 Contextual Info: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation	Original	2N5911, 2N5912 2N5911 NJ30L NJ36D SMP5911, SMP5912 2N5912 2N5911 B-23 SMP5911 SMP5912 NJ-30	PDF
2n5485 equivalent transistor Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416 Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation	Original	2N4416, 2N4416A 2N4416 O-226AB O-92/18) 2n5485 equivalent transistor transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416	PDF
Contextual Info: B 23 9 -9 7 2N5911, 2N5912 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • WIDEBAND DIFFERENTIAL AMPLIFIERS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Total Device Power Dissipation 500 mW Power Derating 4 mW°C	OCR Scan	2N5911, 2N5912 2N9911 NJ30L 0GG07H3	PDF
SMP5911 Abstract: SMP5912 Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage	Original	SMP5911, SMP5912 SMP5911 NJ30L SMP5911 SMP5912	PDF
CD860 Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912 Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation	Original	IFN5911, IFN5912 IFN5911 CD860 IFN860 NJ3600L IF3602 IFN5911 IFN5912	PDF