TRANSISTOR D 288 Search Results

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

8D438

Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Contextual Info: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary

PHD24N03LT

Contextual Info: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .

Contextual Info: PHD20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 D-PAK .

PHD83N03LT

Abstract: PHD83
Contextual Info: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .

transistor BR 471 A

Abstract: PHD95N03LT 08216
Contextual Info: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .

BUK452-60A

Abstract: BUK452-60B T0220AB
Contextual Info: PHILIPS INTERNATIONAL L.5E D B 711DfiSb D0fc.4D5b 114 B I P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

BUZ24

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE BSE D • bbSBTEl 00E0S05 =1 ■ BUK455-450B PowerMOS transistor QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

TRANSISTOR P3

Abstract: 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393
Contextual Info: Product specification Philips Semiconductors T NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • 7 - , ^ BFG91A 711DS2b 0DHS1S2 S1G « P H I N PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

IC 386

Abstract: CB transmitter NTE302
Contextual Info: NTE302 Silicon NPN Transistor AM, CB Transmitter Driver, Switch Description: D 27−MHz AM CB Transmitter Driver Stage Switch Absolute Maximum Ratings: Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

K1HC

Abstract: FVT6
Contextual Info: HD66300T-Horizontal Driver for TFT-Type LCD Color TV PRELIMINARY D escription The HD66300T is a horizontal driver used for TFTtype Thin Film Transistor L C D color TVs. Specifi­ cally, it drives thedrainbussignalsofaTFT-type L C D panel. The HD66300T receives as input tjiree video signals R,

TLP3

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP330 TLP330 PROGRAM MABLE CONTROLLERS A C /D C -IN P U T MODULE TELECOM M UNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode connected inverse parallel in a six lead plastic DIP package. This is suitable for

VF155

Abstract: VF155T vf150-t
Contextual Info: VAL PEY- FI SH ER CORP OE D E B ^413=524 DDDDlbE 2 R^LPEY-FISHERÜTJ A SUBSIDIARY OFÁÍÁJIC VF150TR Series TTL Transistor Type Hybrid Crystal Clock Oscillators Valpey-Fisher’s VF150TR series of hybrid transistor clock oscillators offers TTL com ­ patibility at lower cost. The high quality,

transistor 614

Abstract: transistor D 288 CSA614 33T4 CSD288 transistor 388 max8080 D 1651 transistor
Contextual Info: IL CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0 .9 0 1.15 1,40 3,75 3.88 2,29 2.79 2,54 3.43 0 ,56 12.70 14.73

nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF am plifier with an operation on the low supply

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

BD437-D

Abstract: MOTOROLA TRANSISTOR BD433 BD437 BD438 BD439 BD441 BD442
Contextual Info: MOTOROLA Order this document by BD437/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. BD437 BD441 4.0 AMPERES POWER TRANSISTORS NPN SILICON

39N20

Abstract: BD723
Contextual Info: BD719 BD721 BD723 BD725 P H I L IP S I N T E R N A T I O N A L SbE D I 7 1 1 0 0 2 b 0 0 4 2 1 *^ ObS • PHIN 7 - 3 3 - tl SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended for use in audio output and general purpose