TRANSISTOR D 288 Search Results

m8 smd transistor

Abstract: "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Transistor A137

Contextual Info: L _ _ ALL E GR O MICROSYSTEMS INC T3 T> • 0 S D M 3 3 Ö D 0 D 3 b 7 7 S I ALGR T-91-01 PROCESS DJC Process DJC PNP Small-Signal Transistor Designed for general-purpose switch and amplifier applications, the Process DJC PN P transistor oper­

Contextual Info: SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD PACKAGE D IM E N S IO N S D E S C R IP T IO N in m illim e te rs T h e 2 S C 3 5 4 5 is an N P N silicon e p ita x ia l transistor inte n d e d fo r use as U H F os cillator and m ix e r in a tu n e r o f a T V receiver.

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

transistor b 1238

Abstract: BFG91A UBB328 7407 IC and
Contextual Info: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER P H ILIP S /D IS C R E TE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SO T 103 envelope. PIN It is designed for application in

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMFDPower-Transistor,200V IPB117N20NFD DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMFDPower-Transistor,200V IPB117N20NFD 1Description D²PAK Features

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

8D438

Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Contextual Info: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary

k452

Abstract: BUK452-60A BUK452-60B T0220AB lo25 transistor k452
Contextual Info: N AMER PHILIPS/DISCRETE blE D • ^53^31 □□3GSTÜ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor a13

Abstract: A13 transistor
Contextual Info: ALL E GR O MICROSYSTEMS INC =13 D • 05GM33fl G 0 D 3 b 7 S 1 I ALGR T-91-01 PROCESS DID Process DID NPN Small-Signal Transistor Designed for general-purpose switch and amplifier applications, the Process DID NPN transistor oper­ ates at collector currents of up to 1A. This double­

PHD24N03LT

Contextual Info: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .

Contextual Info: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .

PHD83N03LT

Abstract: PHD83
Contextual Info: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .

transistor BR 471 A

Abstract: PHD95N03LT 08216
Contextual Info: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .

8 pin ic lm 745

Contextual Info: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.

BUK452-60A

Abstract: BUK452-60B T0220AB
Contextual Info: PHILIPS INTERNATIONAL L.5E D B 711DfiSb D0fc.4D5b 114 B I P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

BUZ24

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ24

Abstract: IEC134
Contextual Info: ObE D N AUER PHILIPS/DISCRETE ^53131 00145TÖ BUZ24 PowerMOS transistor 1 T -S i-lS July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE BSE D • bbSBTEl 00E0S05 =1 ■ BUK455-450B PowerMOS transistor QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

bfg91a

Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290
Contextual Info: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in