TRANSISTOR D 1002 Search Results

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

ic TT 2222

Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Contextual Info: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

CZT5401

Contextual Info: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.

CZT5551

Contextual Info: CZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.

BU2522AF

Abstract: BY228
Contextual Info: N AMER PHILIPS/DISCRETE b*ïE D • bbS3^31 002ôbi4ê Philips Sem iconductors SOS MAPX Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

Contextual Info: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for

Contextual Info: 6427525 N E C N E C ELECTRONICS INC 98D ELECTRONICS INC 1 fìfìfì7 n t.427S25 ODlflflflV 4 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK704 D E SC R IPTIO N The 2SK704 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM EN SIO N S designed for solenoid, motor and lamp driver.

PZT772

Contextual Info: PZT772 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver. REF. A C D E I H 7 7 2 Date Code

BUK455-500B

Abstract: T0220AB
Contextual Info: PHILIPS IN TER NATIONA L bSE D B 711Dfl2b DObMDTb SDÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

FX1115

Abstract: BLX65 TRANSISTOR D 471 IEC134 philips choke ferrite FX111
Contextual Info: N AMER P H I L IP S /D IS C RE TE bTE D • ^53131 J QD2^bD 3 231 BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in c!ass-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the

CSB507

Abstract: CSD313
Contextual Info: CSB507, CSD313 CSB507 CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L i DIM A B C D E F G H J K L M N MIN 14.42 9.63 3.56 MAX 16.51

CSB507

Abstract: CSD313
Contextual Info: CSB507, CSD313 CSB507 CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications MIN DIM MAX A 14.42 16.51 9.63 B 10.67 C 3.56 4.83 D 0.90 E 1,15 1,40 F 3.75 3,86 G 2,29 2.79 H 2,54 3.43 J 0,56 K 12.70 14.73

2SC2539

Abstract: transistor 2SC2539 RF POWER TRANSISTOR NPN vhf transistor rf vhf
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2539 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. D im e n s io n s in m m

2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Contextual Info: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good

BLX65

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the

Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm

PL 431 transistor

Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R
Contextual Info: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the

smd transistor marking DK RH

Abstract: smd diode marking 9 ba smd transistor MARKING ly HP 2531 opto
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • D ual Marked w ith D evice Part Num ber and DESC

Contextual Info: 4 n - Provisional Data Sheet No. P D - 9.1718 International IOR Rectifier IRFE330 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D JANTX2N6800U HEXFET TRANSISTOR JANTXV2N6800U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 400Volt,1.0£2, HEXFET

Contextual Info: Provisional Data Sheet No. PD - 9.1666A International IOR Rectifier irfei3o JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D N -C H A N NE L Product Summary 100Volt, 0.18 ii, HEXFET

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 3 9 is a silicon N P N epitaxial planar type transistor designed D im e n s io n s in m m for R F power amplifiers in V H F band m obile radio applications.

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology