TRANSISTOR D 1002 Search Results

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

CZT5401

Contextual Info: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.

CZT5551

Contextual Info: CZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.

Contextual Info: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for

PZT772

Contextual Info: PZT772 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver. REF. A C D E I H 7 7 2 Date Code

CSB507

Abstract: CSD313
Contextual Info: CSB507, CSD313 CSB507 CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L i DIM A B C D E F G H J K L M N MIN 14.42 9.63 3.56 MAX 16.51

MOTOROLA OPTOELECTRONIC

Abstract: MOCD208
Contextual Info: MOTOROLA Order this document by MQCD207/D SEMICONDUCTOR TECHNICAL DATA MOCD207 [CTR = 100-200%] Dual Channel Small Outline Optoisolators MOCD208 [CTR = 40-125%] Transistor Output M o to ro la P referre d D e vices These devices consist of two gallium arsenide infrared emitting diodes

2SC2539

Abstract: transistor 2SC2539 RF POWER TRANSISTOR NPN vhf transistor rf vhf
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2539 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. D im e n s io n s in m m

2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Contextual Info: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good

BLX65

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the

Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm

PL 431 transistor

Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R
Contextual Info: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the

smd transistor marking DK RH

Abstract: smd diode marking 9 ba smd transistor MARKING ly HP 2531 opto
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • D ual Marked w ith D evice Part Num ber and DESC

Contextual Info: Provisional Data Sheet No. PD - 9.1666A International IOR Rectifier irfei3o JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D N -C H A N NE L Product Summary 100Volt, 0.18 ii, HEXFET

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 3 9 is a silicon N P N epitaxial planar type transistor designed D im e n s io n s in m m for R F power amplifiers in V H F band m obile radio applications.

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology

Diode SMD ED 9C

Abstract: transistor smd marking Kd LA 5530
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. F ea tu r es • D ual M arked w ith D ev ice

CNY17-2

Abstract: CNY17-3 CNY17 CNY17-4 diode GG 26 CNY-17-3
Contextual Info: TOSHIBA CNY17-2,CNY17-3#CNY17-4 TO SHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR CNY17-2, CNY17-3, CNY17-4 AC LINE /D IG IT A L LOGIC ISOLATOR D IG ITAL L O G IC /D IG IT A L LOGIC ISOLATOR TELEPHONE LINE RECEIVER TWISTED PAIR LINE RECEIVER HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

transistor C456

Abstract: smd transistor NG c456 transistor
Contextual Info: Provisional Data Sheet No. PD - 9.885B International l ö R Rectifier IRHN9150 IRHN93150 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P-CHANNEL RAD HARD -100Volt, 0 .075^ , RAD HARD HEXFET International R e ctifie r’s P -C hannel RAD H AR D te c h ­

Contextual Info: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: Provisional Data Sheet No. PD - 9.887B International IS R Recti fier R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D IRHM7054 IRHM8054 JANSR2N7394 JANSH2N7394 [REF: MIL-PRF-19500/603] N -C H A N N E L HEXFET TRANSISTOR M E G A R A D HARD 60Volt, 0.03£1, MEGA RAD HARD HEXFET

diode smd ED 68

Abstract: transistor smd 4.z ttp 916
Contextual Info: I International IG R Rectifier PD -9.16 68 A IR G 4 Z Q 7 0 U D preliminary INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Surface Mountable UltraFast CoPack IGBT Features • U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies