TRANSISTOR CR NPN Search Results

BU2508AF

Abstract: transistor fn 155 lem la 100p TRANSISTOR BU2508AF by228 ph transistor A6t 45 700E-15 lem HA BY228 by228 -ph
Contextual Info: N AUER PHILIPS/DIS CR ET E hTE D • bbS3T31 00Efl345 OSD ■ APX Philips Semiconductors_ Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

transistor Y4

Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Contextual Info: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package

transistor r06

Abstract: MEL709
Contextual Info: CRÛ 1T1UJU / W NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

xl 1225 transistor

Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
Contextual Info: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

1117 S Transistor

Abstract: sot122f
Contextual Info: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

MTPBP10

Abstract: UL-44 l44 transistor transistor L44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pf*f*cr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed

QE RB 29

Abstract: si1050
Contextual Info: TOSHIBA 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS U nit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS +0.5 2.5 - 0.3 + 0.25 1.5 - 0.15 FEATURES : • Sma.ll Reverse Transfer Capacitance : Crö —0.7pF (Typ.)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N930. NPN Silicon Small-Signal Transistor CR Y S TA IO N C S 2805 veterww Highway Veterans Hij Suite 14 designad for low power amplifier applications. Ronkonkoma, N.Y. 11778 MAXIMUM RATINGS Symbol Valu« Collector-Emitter Voltage

Contextual Info: i_L N AMER P H I L I P S / D I S CR E T E bbSBTBl 0015251 1 □ bE D T RZ2833B45W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.

M0607

Contextual Info: _ - . :- . ~~_ . ~~ - N AMER PHIL IPS /D IS CR ET E _ Gt.E D ' • ii ~ ■ ■ ■■ t.bS3T31 D01SD4S Ì ■ 11 ■ M06075B400Z M AINTENANCE TYPE r - a s - i g - PULSED MICROWAVE POWER TRANSISTOR

Contextual Info: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.

2n5088 transistor

Abstract: 2N5088 2N6428A
Contextual Info: SAMSUNG S EM I CON DU C T CR INC 2N6428A J*4E D | 7^4142 □ 0 D 7 1 £i 3 fc, | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V c e o = 5 0 V • Collector D issipation: P c m ax =625m W ABSO LUTE MAXIMUM RATINGS (Ta=25°C)

2sc4881

Contextual Info: TOSHIBA 2SC4881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4881 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10 +0.3 Low Saturation Voltage : VCE s a t = 0.4V (MAX.) TTicrVi S it-ipp H S w itiO iin cr T im p •* D— c> -"üug = , $ 3.2 ± 0.2

Contextual Info: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

2SA1042

Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432
Contextual Info: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching

BF747

Abstract: MBB400 DB64 transistor HJ 388
Contextual Info: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.

SOT-103

Abstract: SOT103 BFR591 transistor SOT103 MSB037
Contextual Info: • tjbS3T31 DDBlTiE TET M APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHIL I P S / D I S CR E T E FEATURES b^E » ■ PINNING • High power gain PIN • Low noise figure • High transition frequency • Gold metallization ensures

PTC2000

Abstract: CCC2000 transistor cr
Contextual Info: 6 1 15950 M I CR OS EMÌ CORP/POWER 02E 00 52 1 D mT| biis^so ODOOsai □5 i | CCC2000 TECHNOLOGY 50 A, 1000 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au

transistor tt 2222

Abstract: BLW33 BY206 BZY88-C3V3 DDST320 JH transistor BZY88C philips mfr
Contextual Info: N AMER P H I LI PS / DI S CR ET E b^E » • b b s a 'm □ G a 'm ? J Daa IAPX BLW33 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

4312 020 36640

Abstract: BY206 BLX39 bv-300 carbon resistors
Contextual Info: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

BT8032

Abstract: transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803
Contextual Info: MELODY GENERATOR WITH ACCOMPANEMENT BT8032 FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor

tln103

Abstract: TPS603 VOC sensor photo 2870
Contextual Info: TOSHIBA {D IS CR ETE/OPTO} 9097250 TOSHIBA NPN 99D < D I SCRETE/OPTO> TPS603 S IL IC O N D e | c1GT7BS0 D0173a0 b 17328 * E P IT A X IA L PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR . OPTICAL SWITCH . POSITION SENSOR . TAPE, CARD READERS . ENCODERS . Spectrally and Mechanically Matched with IR Emitter