MEL709 Search Results

TRANSISTOR 2341

Abstract: xp950nm
Contextual Info: CRO MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 5mm light rejective epoxy package. This device is suitable for use in a light sersor of the industial

G1815

Abstract: g181 LHC-100 MEL709
Contextual Info: MEL709 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control application.

Contextual Info: MICRO ELECTRONICS MIE LT» 1,0*11700 D 0000=10=1 3 HMEHK MEL709D NPN PLANAR PHOTO-TRANSISTOR The MEL709D Is silicon phototransistor with external base connection and built in a standard T-l 3/4 5mm0 light rejective filter epoxy package. This device is suitable for use in a light

transistor r06

Abstract: MEL709
Contextual Info: CRÛ 1T1UJU / W NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control

MEL709D

Contextual Info: MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION 04.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. Ali dimension in mm(inch) No Scale ToL : +/-0.3mm r0.7(0.03)

MEL709D

Abstract: TB 006 sec 73 s
Contextual Info: CKO MÜL'/ÜVLf NPN SILICON PHOTO TRANSISTOR DESCRIPTION *4.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. 87 (0.34) A ll dim ension in m m (inch) No Scale

MAL100

Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30

MEL12

Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30

MEL12

Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
Contextual Info: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

L303A

Abstract: DL78 L 31A MA1515 EL79D
Contextual Info: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a

Contextual Info: Pin Photo Diodes TYPE NO. X.p nm ML303 ML308 940 940 SENSITIVITY (nA/lx) 50 25 Id H MAX (mW/cm1) (nA) 5 1 30 30 VR (V) 10 10 t«lf TYP TYP (ns) (ns) 50 50 50 50 PACKAGE CASE NO. Side On Type Black Plastic 1-77 1-78 Photo Transistor TYPE NO. MALI 00 MAH 100