ML303 Search Results

Contextual Info: m MÊÊk PV ML303B MICRO •= DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.

H-90

Abstract: ML303B
Contextual Info: ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. R2.5 0.1 5.0(0.2 It feaxires high sensitivity 3.0 (0.13) 0.6(0.024) x45° « . 5(0.06) and small junction capacitance make it possible

Contextual Info: CRO ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It fea:ures high sensitivity and small junction capacitance make it possible to operate at high frequency application.

Contextual Info: CRO ML303 PIN PHOTO DIODE DESCRIPTION ML303 is a side on type PIN photodiode with inherent visible light encapsulation. It features R2.5 0.•• D 5.0(0.2 rejective filter epoxy high sensitivity ( r 3.0 <0.13) 0.6(0.024) _ J x45° i 1.5(0.06) 1 and smali junction capacitance m ake it possible

n004

Abstract: MIB57T-K ML303
Contextual Info: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 DESCRIPTION " 0 . 196 MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.

MIB57T-K

Abstract: ML303
Contextual Info: MEB57T-K INFRARED EMITTING DIODE 04.98 ’ 0.196 DESCRIPTION MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303. 6.7

MIB57T-K

Abstract: ML303
Contextual Info: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57T-K is a GaAIAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.

L303A

Abstract: DL78 L 31A MA1515 EL79D
Contextual Info: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a

ML3038

Abstract: ML303B
Contextual Info: MICRO PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.

ML303

Abstract: 2870
Contextual Info: ML303 PIN PHOTO DIODE DESCRIPTION ML303 is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It features R2.5 0.1 - ( 5.0(0.2)- high sensitivity D 3,0 0,6(0,024) x45° (0-13) .5(0.06} and small junction capacitance make it possible

Contextual Info: Pin Photo Diodes TYPE NO. X.p nm ML303 ML308 940 940 SENSITIVITY (nA/lx) 50 25 Id H MAX (mW/cm1) (nA) 5 1 30 30 VR (V) 10 10 t«lf TYP TYP (ns) (ns) 50 50 50 50 PACKAGE CASE NO. Side On Type Black Plastic 1-77 1-78 Photo Transistor TYPE NO. MALI 00 MAH 100

ML309

Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
Contextual Info: Infrared Emitting Diodes TYPEE p A.p V f MAX 2 6 1/2 NO. nm TYP (mW) (mA) (V) (mA) MI31T MI31TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 MI37T MIB37T 940 940 2.0 2.0 20 20 MI38T MIB38T 940 940 2.0 2.0 MI51T M151 TA 940

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

MI301

Contextual Info: bSMTôET DD1 7 7 3 2 LTT • ANTENNA SWITCH M I303 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.

ML309

Contextual Info: MICRO ELECTRONICS LTD SIE D • bOT17flfi GOÜ1G1S TTH ■ MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE p Àp V TYP mW (mA) f MAX (V) 1 2 01/2 1 PACKAGE CASE 35 35 03.2mm 0.69" lead 1-5 20 20 35 35 T-1 standard 03.0mm 1-43 2.0 2.0 100 100 30 18 03.0mm flangeless

louver

Abstract: MU300 LUM-5122
Contextual Info: Dot matrix units Dot matrix units The LUM series of dot matrix units can be used to display any image or character. They are available in 16 x 16, 24 x 24, 16 x 32, and 24 x 48 matrices. They can display three colors, red and green and when both elements are lit, the combination is an orange color. The units are

BOX69477

Abstract: MIB57T-J ML303B
Contextual Info: MIB57T-J INFRARED EMITTING DIODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.

nokia mobile jumper setting

Abstract: nokia 100 mobile jumper setting LG mobile usb cable wire pin diagram nokia mobile phone repair circuit SD-C2502 nokia mobile charger circuit mainboard t 13 epson nokia 520 scheme nokia 100 mobile jumper KEY PAD IC circuit diagram of nokia 101
Contextual Info: TravelMate 610 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.41Q04.001 DOC. NO.: SG363-0103A PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 610 service guide.

BOX69477

Abstract: ML303B 100mA-1A
Contextual Info: CRO MIB57T-J INFRARED EM ITTIN G D IODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.

Silectron core

Abstract: TWC-500 permalloy 80 2605SC ring core permalloy bh curve supermalloy bh curve MAGNESIL - N Transformer and Inductor Design Handbook, orthonol ring core permalloy 80
Contextual Info: TAPE WOUND CORES Division of Spang & Company DESIGN MANUAL TWC-500 ABOUT MAGNETICS Since 1949 Magnetics, a division of Spang & Company, has been a leading world supplier of precision, high permeability magnetic components and materials to the electronics industry. Applications for

ML309

Contextual Info: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens