TRANSISTOR CODE J6 Search Results

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
Contextual Info: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

Contextual Info: SIEMENS BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode 12 • Avalanche-rated V»;05'J6 i Pin 1 Pin 2 G Type BUZ 308 Vbs 800 V 2.6 A ^DS on 4 fl Pin 3 s D Package Ordering Code TO-218AA C67078-S3109-A2 Maximum Ratings Parameter Symbol

J964

Abstract: AGR21045EF AGR21045XF JESD22-C101A
Contextual Info: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

J964

Contextual Info: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

AGR21045EF

Abstract: AGR21045XF JESD22-C101A
Contextual Info: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

c125t

Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Contextual Info: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-

2N4401_D11Z

Abstract: PN2222N TO-92 Tape and Reel Data D81Z CLIP-2 j21z CBVK741B019 F63TNR Fairchild taping TO-92 transistor k 0247 J60Z
Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:

transistor equivalent 2n5551

Abstract: BC557 TRANSISTOR REPLACEMENT transistor KSP 42 2025h AN500-x Application Notes AN500-x AN522 AS2525 AN525 AS2522 and AS2591
Contextual Info: AN 522: AS2522A/B Single Chip Handsfree Line Interface Demo Board Application Note AN522 – Preliminary Application Note AS2522A/AS2522B Key features • • • • • • • • complete handsfree telephone with AS2522 Line Interface FSK Transmitter V.23,Bell 202, V.21, Bell103 on AS2522B only

J6 transistor

Abstract: transistor j6 transistor marking code 431
Contextual Info: EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 100V • RDS ON , 160 mΩ • ID, 3.4 A • Optimized eGaN FET for high frequency applications EPC8010 eGaN FETs are supplied only in passivated die form with solder bars

MPSA92(KSP92) equivalent

Abstract: AN2201 CI AS2536 TRANSISTOR SMD 13W MPS A43 SCHEMATIC smd transistor BC557 SmD TRANSISTOR a42 CI AS2534B 1N4007 M7 150v varistor
Contextual Info: Application Note AN2201 Application Note AN2201: AS2533.6 Single Chip Telephone Demo Board  Austria Mikro Systeme International AG 1 Scope This application note describes the use of the Single Chip Telephone IC´s AS2533.6, based on the multi standard demo board DB2201.

D72Z

Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z
Contextual Info: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:

2N4401_D11Z

Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z
Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION

BLY94

Abstract: VQE 13E philips Trimmer 60 pf transistor 42t vhf power transistor 50W Wf VQE 23 F BLY94 application notes film dielectric trimmer WF VQE 23 D WF VQE 23 e
Contextual Info: PHILIPS INTERNATIONAL bSE ß • 7110äSb> DGL3bSS 5^3 ■ PHIN B LY 94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

bo434

Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Contextual Info: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages

power transistor mrc 438

Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Contextual Info: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase

BS270

Abstract: J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z
Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to

J6 transistor

Abstract: S9014 S9014W transistor SOT-23 marking code J6
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015W. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9014W Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-323 ORDERING INFORMATION

transistor SOT23 J6

Abstract: Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

J555

Contextual Info: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

2N6084

Abstract: 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6
Contextual Info: II j - t m IW iiC tT JS & rrtM « V l l W W ^ i l f l 140 Commerce Drive Montgomeryvìlle, PA 18936-1013 Tel: 215 631-9840 . 2 N6 080 2 N6084 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FREGLENCY 175MHz VOLTAGE 12,5V : POWER OUT 4 40W

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MC9S12ZVMC12

Abstract: resolver sensor S12ZVML12EVBQSG MC9S12ZVM
Contextual Info: Freescale Semiconductor User's Guide Document Number:MC9S12ZVM128MCBUG Rev 1, 07/2013 S12ZVM12EVB Evaluation Board User Guide Contents 1 Introduction The S12ZVMx12EVB board is designed to drive 3-phase BLDC or PMSM motors, enabling implementation of motor