TRANSISTOR CODE J6 Search Results

J964

Contextual Info: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

2N4401_D11Z

Abstract: PN2222N TO-92 Tape and Reel Data D81Z CLIP-2 j21z CBVK741B019 F63TNR Fairchild taping TO-92 transistor k 0247 J60Z
Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:

MPSA92(KSP92) equivalent

Abstract: AN2201 CI AS2536 TRANSISTOR SMD 13W MPS A43 SCHEMATIC smd transistor BC557 SmD TRANSISTOR a42 CI AS2534B 1N4007 M7 150v varistor
Contextual Info: Application Note AN2201 Application Note AN2201: AS2533.6 Single Chip Telephone Demo Board  Austria Mikro Systeme International AG 1 Scope This application note describes the use of the Single Chip Telephone IC´s AS2533.6, based on the multi standard demo board DB2201.

BLY94

Abstract: VQE 13E philips Trimmer 60 pf transistor 42t vhf power transistor 50W Wf VQE 23 F BLY94 application notes film dielectric trimmer WF VQE 23 D WF VQE 23 e
Contextual Info: PHILIPS INTERNATIONAL bSE ß • 7110äSb> DGL3bSS 5^3 ■ PHIN B LY 94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

bo434

Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Contextual Info: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages

power transistor mrc 438

Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Contextual Info: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase

BS270

Abstract: J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z
Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to

2N6084

Abstract: 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6
Contextual Info: II j - t m IW iiC tT JS & rrtM « V l l W W ^ i l f l 140 Commerce Drive Montgomeryvìlle, PA 18936-1013 Tel: 215 631-9840 . 2 N6 080 2 N6084 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FREGLENCY 175MHz VOLTAGE 12,5V : POWER OUT 4 40W

MC9S12ZVMC12

Abstract: resolver sensor S12ZVML12EVBQSG MC9S12ZVM
Contextual Info: Freescale Semiconductor User's Guide Document Number:MC9S12ZVM128MCBUG Rev 1, 07/2013 S12ZVM12EVB Evaluation Board User Guide Contents 1 Introduction The S12ZVMx12EVB board is designed to drive 3-phase BLDC or PMSM motors, enabling implementation of motor

Contextual Info: N AMER PHILIPS/DISCRETE ObE D LbSBTBl 0015037 T • _ JL MAINTENANCE TYPE MKB12040WS T - 3 3 - II NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz.

diode R31

Abstract: NPN Transistor 10A 24V AD1P
Contextual Info: FS9922-DMM4 Data Sheet Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 1.0 Mar. 2005 Fortune Semiconductor Corp. FS9922-DMM4-DS-10_EN CR-004 FS9922-DMM4 Taipei Office： 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,

FS9922-DMM3

Contextual Info: FS9922-DMM3 Data Sheet Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 0.5 Dec. 2004 Fortune Semiconductor Corp. FS9922-DMM3-DS-05_EN CR-004 FS9922-DMM3 Taipei Office: 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,

FX1115

Contextual Info: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.

FS9922-DMM4-DS-11

Abstract: FS9922-DMM4
Contextual Info: REV. 1.1 FS9922-DMM4-DS-11_EN Datasheet FS9922-DMM4 Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph SEP 2006 FS9922-DMM4 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,

Contextual Info: FS9922-DMM3-DS-10_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.0 FS9922-DMM3 Fo Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph FS9922-DMM3 Fortune Semiconductor Corporation Fo F P r R ro SC

transistor SOT23 J6

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A

S9014W

Abstract: S9015W
Contextual Info: S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 Complementary to S9015W A L 3 3 C B Top View 1 1 PACKAGING INFORMATION K 2 E 2 Weight: 0.0074 g

PKB20010U

Contextual Info: J_L N AtlER PHILIPS/DISCRETE QbE D • bbS3TBl DDlSOfl? 3 ■ “ II PKB 20010U MAINTENANCE TYPE _ /V T -33-01 MICROWAVE POWER TRANSISTOR N-P-N silicon transistor fo r use in space, m ilitary and professional applications. It •

ULBM5

Abstract: ASI10680
Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

TVU025

Abstract: TRANSISTOR S 838 ASI10650 TRANSISTOR K 135 J 50
Contextual Info: TVU025 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .450 BAL FLG A The ASI TVU025 is a gold metalized RF power transistor designed for high linearity Calss-AB operation in UHF band IV and V TV transmitters. .060x45° B A FULL R .100x45° 1 1

ALR015

Abstract: transistor code j6 ASI10511 transistor j6 306 transistor
Contextual Info: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: ØE F G H MAXIMUM RATINGS IC 1.8 A VCC 32 V -65 °C to +250 °C TJ TSTG -65 °C to +200 °C θJC 4.0 °C/W CHARACTERISTICS R P DIM MINIMUM inches / mm MAXIMUM inches / mm A .095 / 2.41

Z9 TRANSISTOR SMD

Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Contextual Info: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication