J555 Search Results

Contextual Info: D6 9 -9 7 J553, J554, J555, J556, J557 CURRENT REGULATOR DIODE • CURRENT REGULATION • CURRENT LIMITING • BIASING Absolute maximum ratings at TA = 25'C. Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation 50 V 50 mA

Contextual Info: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • • • Fast Speed Switching Wide Safe Operating Area Suitable for ElectronicBallast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol

Contextual Info: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*

J5555

Contextual Info: FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5555 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol

Contextual Info: FJD5555 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application 1 • Electronic Ballast • Switch Mode Power Supplies Marking : J5555 1. Base 2. Collector 3. Emitter Ordering Information

J5555

Abstract: FJD5555 FJD5555TM US Global Sat
Contextual Info: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*

electronic ballast with npn transistor

Contextual Info: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol

J555

Abstract: J553 J556
Contextual Info: SILICONIX INC là E D • C X 'S ilico ix ilic o n r . JLM 8254735 001,310b =1 ■ ' J553 SERIES incorporated ii Current Regulator Diodes The J553 Series Is a low cost family of current regulators designed for demanding applications In J553 J554 J555 J556

Contextual Info: FJD5553 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application DPAK Marking : J5553 1 • Electronic Ballast • Switch Mode Power Supplies 1. Base 2. Collector 3. Emitter Ordering Information

J555

Abstract: J554 J553 J556 diode j555 DIODE DATABOOK J557 nj16 current regulator diode j555 diode
Contextual Info: Databook.fxp 1/19/99 12:10 PM Page C-6 C-6 01/99 J553, J554, J555, J556, J557 Current Regulator Diode Absolute maximum ratings at TA = 25¡C. ¥ Current Regulation ¥ Current Limiting ¥ Biasing Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation

j555

Abstract: marking A1 TRANSISTOR FJD5553 FJD5553TM J5553 electronic ballast with npn transistor
Contextual Info: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol

J5555

Abstract: J555 FJD5555 FJD5555TM
Contextual Info: FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112T is a silicon monolithic integrated circuit designed as cellular/cordless telephone receiver stage. 1st frequency down-converter for

32 inch TV samsung lcd Schematic

Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A

Y splitter rj45

Abstract: CANopen RJ45 usb to rj45 extenders rj45 10pin molex 50394-8100 crimping RJ45 AMP stegmann MC58120 MC58220 Cable-RJ45-02-R
Contextual Info: Prodigy /CME PCI User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.2, December 2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,

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455a5

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J5555

Abstract: J5555 to220 NPN transistor Electronic ballast FJP5555 FJP5555TU Electronic ballast 100W J555 transistor 250W
Contextual Info: FJP5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 TO-220 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter TC=25°C unless otherwise noted

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

1944-01M

Abstract: 1944-02M 1944-03M 1944-04M MIL-C-15305
Contextual Info: Series 1944 & 1945 Molded Unshielded RF Coils • 1944-01M 1944-02M 1944-03M 1944-04M 1944-05M 1944-06M 1944-07M 1944-08M 1944-09M 1944-10M 1944-11M 1944-12M 1944-13M 1944-14M 1944-15K 1944-16K 1944-17K ■ 1945-01K 1945-02K 1945-03K 1945-04K 1945-05K 1945-06K

Contextual Info: ja r LOG AA DRAWING MADE IN THIRD A N G LE PROJECTION TH IS DRAWING IS UNPUBLISHED . | R E LEA SE D FOR PUBLICATION REVISIONS .'•19 p Copyright .19 ■ _ by A M P Incorporated , Harrtsburg . P a . A l l international rights A M P PRODUCTS MAY BE CDVCREO BY U . S . AND FOREIGN PATENTS AND/OR PATENTS PENDING.

Contextual Info: CO M PAN Y OF MODEL LPTJ3-2 Toroidal Inductor Surface Mount High Current Bifilar Wincing Cata 5 a 5 3 a 7 a 4. a 3 a 2 9 ia PA R A LLEL CONNECTED McaeiNu.'ncer nauctance atODC uH -.2 ^ •5 3 -2 -7 .2 •_3TJ3-2 - 1. - $ f 1 ti II II II II 1 _^ -3 -7 - 'J*T J3-2- .5

marking code RAD SMD Transistor npn

Abstract: JS55
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate