EPC8010 Search Results
EPC8010 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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EPC8010 | EPC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 100V 2.7A BUMPED DIE | Original | 1.69MB | |||
EPC8010ENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 3.4A BUMPED DIE | Original | 7 | |||
EPC8010TENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 3.4A BUMPED DIE | Original | 7 |
EPC8010 Price and Stock
Efficient Power Conversion EPC8010GANFET N-CH 100V 4A DIE |
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EPC8010 | Digi-Reel | 411 | 1 |
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EPC8010 | 2,216 |
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EPC EPC8010 |
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EPC8010 | 11,358 |
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EPC8010 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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J6 transistor
Abstract: transistor j6 transistor marking code 431
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Original |
EPC8010 EPC8010 J6 transistor transistor j6 transistor marking code 431 | |
EPC8004Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been |
Original |
AN015 EPC8000 ATS-54150K-C2-R0 EPC8004 |