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    J35Z Price and Stock

    Glenair Inc

    Glenair Inc D38999/41NJ35ZK

    HERMETICS - 38999 CONNECTORS - Bulk (Alt: D38999/41NJ35ZK)
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    Avnet Americas D38999/41NJ35ZK Bulk 5 Weeks 1
    • 1 $15085.60
    • 10 $7346.44
    • 100 $7346.44
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    Newark D38999/41NJ35ZK Bulk 1
    • 1 $13008.90
    • 10 $7247.35
    • 100 $5155.02
    • 1000 $5155.02
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    Glenair Inc D38999/25NJ35ZD

    - Bulk (Alt: D38999/25NJ35ZD)
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    Avnet Americas D38999/25NJ35ZD Bulk 5 Weeks 1
    • 1 $12219.07
    • 10 $6296.80
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    Newark D38999/25NJ35ZD Bulk 1
    • 1 $11150.22
    • 10 $6211.90
    • 100 $4418.51
    • 1000 $4418.51
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    Glenair Inc D38999/21YJ35ZA

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    Avnet Americas D38999/21YJ35ZA Bulk 5 Weeks 1
    • 1 $12219.34
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    Newark D38999/21YJ35ZA Bulk 1
    • 1 $11150.42
    • 10 $6212.01
    • 100 $4418.58
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    Glenair Inc D38999/23HJ35ZD

    - Bulk (Alt: D38999/23HJ35ZD)
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    Avnet Americas D38999/23HJ35ZD Bulk 5 Weeks 1
    • 1 $12766.12
    • 10 $6659.92
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    Newark D38999/23HJ35ZD Bulk 1
    • 1 $12452.51
    • 10 $6937.42
    • 100 $4934.56
    • 1000 $4934.56
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    Glenair Inc D38999/48YJ35ZD

    HERMETICS - 38999 CONNECTORS - Bulk (Alt: D38999/48YJ35ZD)
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    Avnet Americas D38999/48YJ35ZD Bulk 5 Weeks 1
    • 1 $15064.52
    • 10 $7336.18
    • 100 $7336.18
    • 1000 $7336.18
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    Newark D38999/48YJ35ZD Bulk 1
    • 1 $12990.66
    • 10 $7237.23
    • 100 $5147.82
    • 1000 $5147.82
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    Find more J35Z price and stock on Findchips.com

    J35Z Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-92 Package Dimensions

    Abstract: L34Z J35Z Leadform
    Contextual Info: TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed


    Original     		to-92 package dimensionsl34zj35zleadform PDF

    J35Z

    Abstract: L34Z
    Contextual Info: Package Information TO-92 Tape and Reel Data and Package Dimensions, continued TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96, 97*, 98*) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22


    Original     		j35zl34z PDF

    MOSFET bs170

    Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
    Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    Original     		bs170mmbf170500mamosfet bs170+6cbvk741b019f63tnrpn2222nbs170 anbs170 to-92bs170 application note PDF

    F63TNR

    Abstract: PN2222N BS270 CBVK741B019
    Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		bs270500ma400maf63tnr+2pn2222ncbvk741b019 PDF

    MMBF170

    Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
    Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    Original     		bs170mmbf170500mabs170 application note+6cbvk741b019f63tnrpn2222nbs170 - j35zto 92 bs170bs170 to-92 PDF

    BSS110

    Abstract: BSS84
    Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		bss84bss110 PDF

    BS270

    Abstract: J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z
    Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		bs270500ma400maj60z+5d72zcbvk741b019f63tnrpn2222nj35z PDF

    BSS100

    Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
    Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		bss100bss123transistor p1 pbss100 transistor datasheet+5bss100 transistorbss100 to-92f1 sot23bss100 equivalenttransistor bss123 PDF

    2N4401_D11Z

    Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z
    Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION


    Original     		f63tnr375mm267mm327mm+9158mm135mm333mm231mm183mm2n4401_d11zfairchild taping to-92to-92 tape and reel data d81zj60z PDF

    D72Z

    Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z
    Contextual Info: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		o-226aeo-226cbvk741b019pn2222n+7d9842f63tnrpn222nd9842abd72zd73zj32z PDF

    BSS110

    Abstract: BSS84 CBVK741B019 F63TNR PN2222N
    Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		bss84bss110cbvk741b019f63tnr+1pn2222n PDF

    Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		bs270500ma400ma PDF

    BSS110

    Abstract: BSS84
    Contextual Info: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		bss84bss110 PDF

    BSS100

    Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
    Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		bss100bss123cbvk741b019f63tnr+2pn2222nbss100 to-92 PDF

    bs270

    Abstract: J35Z
    Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to


    Original     		bs270500ma400maj35z PDF