J35Z Search Results

J35Z Price and Stock

Filter by Manufacturer

onsemi


onsemi BC338_J35Z TRANS NPN 25V 0.8A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC338_J35Z	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
onsemi BC214_J35Z TRANS PNP 30V 0.5A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC214_J35Z	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
onsemi BC368_J35Z TRANS NPN 20V 2A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC368_J35Z	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi BC547B_J35Z TRANS NPN 45V 0.1A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC547B_J35Z	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi BC183C_J35Z TRANS NPN 30V 0.1A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC183C_J35Z	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now

Find more J35Z price and stock on Findchips.com

J35Z Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO-92 Package Dimensions Abstract: L34Z J35Z Leadform Contextual Info: TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed	Original		PDF
J35Z Abstract: L34Z Contextual Info: Package Information TO-92 Tape and Reel Data and Package Dimensions, continued TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96, 97, 98) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22	Original		PDF
MOSFET bs170 Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	Original	BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note	PDF
F63TNR Abstract: PN2222N BS270 CBVK741B019 Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	BS270 500mA 400mA, F63TNR PN2222N BS270 CBVK741B019	PDF
MMBF170 Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92 Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	Original	BS170 MMBF170 500mA MMBF170 BS170 application note CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92	PDF
BSS110 Abstract: BSS84 Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	BSS84 BSS110 BSS84: BSS110: BSS110	PDF
BS270 Abstract: J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	BS270 500mA 400mA, BS270 J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z	PDF
BSS100 Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123 Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	BSS100 BSS123 BSS100: BSS123: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123	PDF
2N4401_D11Z Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION	Original	F63TNR 375mm 267mm 327mm 158mm 135mm 333mm 231mm 183mm 2N4401_D11Z Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z	PDF
D72Z Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z Contextual Info: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:	Original	O-226AE O-226 CBVK741B019 PN2222N D9842 F63TNR PN222N F63TNR D9842AB D72Z CBVK741B019 PN2222N D73Z J32Z	PDF
BSS110 Abstract: BSS84 CBVK741B019 F63TNR PN2222N Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	BSS84 BSS110 BSS84: BSS110: BSS110 CBVK741B019 F63TNR PN2222N	PDF
Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	BS270 500mA 400mA,	PDF
BSS110 Abstract: BSS84 Contextual Info: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	BSS84 BSS110 BSS84: BSS110: BSS110	PDF
BSS100 Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92 Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	BSS100 BSS123 BSS100: BSS123: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92	PDF

bs270 Abstract: J35Z Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	BS270 500mA 400mA, J35Z	PDF